Deep-Red InP Core-Multishell Quantum Dots for Highly Bright and Efficient Light-Emitting Diodes,Advanced Optical Materials

当前位置： X-MOL 学术 › Adv. Opt. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Deep-Red InP Core-Multishell Quantum Dots for Highly Bright and Efficient Light-Emitting Diodes
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2023-06-17 , DOI: 10.1002/adom.202300612
Pan Huang ₁ , Xiaonan Liu ₁ , Geyu Jin ₁ , Fangze Liu ₂ , Huaibin Shen ₃ , Hongbo Li ₁

Affiliation

InP-based quantum dots (QDs) are one of the most promising heavy-metal-free materials for light-emitting applications to substitute cadmium-analogous QDs. With a bulk band gap of 1.35 eV, InP QDs can be made to emit light in the deep red and even near-infrared region by adjusting the size. Deep-red light-emitting diodes (LEDs) are of great interest for promoting the growth of plants and accurate red LED displays. However, the synthesis and the fabrication of InP-based quantum-dot LEDs (QLEDs) emitting in the deep red region are still under development. Here, the study reports deep-red InP/ZnSe/ZnSeS/ZnS core-shell QDs with a photoluminescence (PL) emission peak at 680 nm and a PL quantum yield up to 95%, which is the highest among reported deep-red QDs. Multi-shell with a transition layer of ZnSeS is realized to decrease the lattice mismatch in the shell and increase the shell thickness, which efficiently confines charge carriers and reduces non-radiative recombinations. In addition, the core-shell InP QLED achieves a high luminescence of 2263 cd m⁻² and an external quantum efficiency up to 6.5%. This report provides a new strategy for promoting the development of deep-red QLEDs for next-generation lighting and display devices.

中文翻译：

用于高亮度和高效发光二极管的深红色 InP 核-多壳量子点

InP基量子点（QD）是最有希望替代镉类QD的发光应用无重金属材料之一。InP量子点的体带隙为1.35 eV，通过调整尺寸可以使InP量子点在深红甚至近红外区域发光。深红色发光二极管 (LED) 对于促进植物生长和精确的红色 LED 显示具有很大的意义。然而，在深红色区域发光的 InP 基量子点 LED (QLED) 的合成和制造仍在开发中。该研究报告了深红色InP/ZnSe/ZnSeS/ZnS核壳量子点，其光致发光（PL）发射峰位于680 nm，PL量子产率高达95%，是已报道的深红色量子点中最高的。。实现了具有ZnSeS过渡层的多壳层，减少了壳层的晶格失配并增加了壳层厚度，从而有效地限制了载流子并减少了非辐射复合。此外，核壳InP QLED实现了2263 cd m ^-2的高发光度和高达6.5%的外量子效率。该报告为促进下一代照明和显示设备深红色QLED的开发提供了新策略。

更新日期：2023-06-17

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南