用于微机电声学滤波器应用的金属有机化学气相沉积生长的 AlScN,Physica Status Solidi (A) - Applications and Materials Science

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用于微机电声学滤波器应用的金属有机化学气相沉积生长的 AlScN
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2023-06-12 , DOI: 10.1002/pssa.202200849
Craig G. Moe ₁ , Jeff Leathersich ₁ , Devon Carlstrom ₁ , Frank Bi ₁ , Daeho Kim ₁ , Jeffrey B. Shealy ₁

Affiliation

AlScN 薄膜是在商业金属有机化学气相沉积 (MOCVD) 系统中生产的，该系统修改为低蒸气压 Sc 金属有机前体。针对一系列成分的表面形态、薄膜应力和压电系数优化了生长条件。外延结构旨在消除薄膜生长过程中产生的内部拉伸应力，并防止 MOCVD 工艺特有的表面吸附原子相互作用。利用这些薄膜，采用新型微机电体声波 (BAW) 传输工艺制造宽带谐振器和滤波器。在晶圆上测试时，谐振器表现出

k_{有效值}^{2} $k_{\text{eff}}^{2}$

10.5%，以及

问_{最大限度} $Q_{\text{最大}}$

值为 1400。使用这些谐振器的梯型 RF 滤波器在 6.2 GHz 下制造，与使用物理气相沉积 AlScN 制造的滤波器相比，性能有所提高。

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Metal–Organic Chemical Vapor Deposition-Grown AlScN for Microelectromechanical-Based Acoustic Filter Applications

AlScN films are produced in a commercial metal–organic chemical vapor deposition (MOCVD) system modified to low-vapor-pressure Sc metal–organic precursors. Growth conditions are optimized for surface morphology, film stress, and piezoelectric coefficient across a range of compositions. Epitaxial structures are designed to eliminate internal tensile stresses that develop during the film growth as well as prevent surface adatom interactions unique to the MOCVD process. From these films, wide-bandwidth resonators and filters are manufactured using a novel microelectromechanical-based bulk acoustic wave (BAW) transfer process. When tested on-wafer, resonators exhibit a

k_{eff}^{2} $k_{\text{eff}}^{2}$

of 10.5%, and a

Q_{max} $Q_{\text{max}}$

value of 1400. Ladder-type RF filters using these resonators are fabricated at 6.2 GHz and show improved performance over filters fabricated using physical vapor deposition-deposited AlScN.

更新日期：2023-06-12

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