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Cyano-functionalized organic and polymeric semiconductors for high-performance n-type organic electronic devices
Materials Chemistry Frontiers ( IF 6.0 ) Pub Date : 2023-06-13 , DOI: 10.1039/d3qm00201b
Yongchun Li 1 , Enmin Huang 1 , Xugang Guo 1, 2 , Kui Feng 1, 3
Affiliation  

The development of high-performance n-type organic and polymeric semiconductors lags far behind that of p-type counterparts due to a paucity of strongly electron-deficient building blocks. Nevertheless, n-type semiconductors are essential for constructing complementary metal oxide semiconductor (CMOS)-like logic circuits and p–n junction devices. Among various electron-deficient building blocks, cyano-functionalized (hetero)arenes are emerging ones to enable high-performance n-type organic and polymeric semiconductors. In this review, we summarize the recent progress in cyano-functionalized building blocks, including cyano-functionalized indenofluorene, cyano-functionalized imide-based (hetero)arenes, cyano-functionalized benzothiadiazole, and 2-(3-oxo-2,3-dihydroinden-1-ylidene)-malononitrile. Additionally, (hetero)arenes end-capped with dicyanomethylene are also elaborated. Based on these cyano-functionalized building blocks, a great number of n-type organic and polymeric semiconductors are developed, showing much suppressed frontier molecular orbitals (FMOs) compared to their non-cyanated analogues. Thus, very promising device performance in various n-type organic electronic devices, including organic thin-film transistors (OTFTs), organic solar cells (OSCs), and organic thermoelectrics (OTEs), is obtained. These results demonstrate that cyano functionalization is a powerful strategy for developing organic and polymeric semiconductors with deep-lying lowest unoccupied molecular orbitals (LUMOs) for n-type organic electronics. Finally, we offer our insights into the future development of cyano-functionalized n-type organic and polymeric semiconductors.

中文翻译:

用于高性能n型有机电子器件的氰基功能化有机和聚合物半导体

由于缺乏强缺电子结构单元,高性能 n 型有机和聚合物半导体的发展远远落后于 p 型半导体。然而,n 型半导体对于构建类似互补金属氧化物半导体 (CMOS) 的逻辑电路和 p-n 结器件至关重要。在各种缺电子构件中,氰基功能化(杂)芳烃是新兴的构件,可实现高性能 n 型有机和聚合物半导体。在这篇综述中,我们总结了氰基功能化结构单元的最新进展,包括氰基功能化茚并芴、氰基功能化酰亚胺基(杂)芳烃、氰基功能化苯并噻二唑和2-(3-氧代-2,3-)二氢茚-1-亚基)-丙二腈。此外,还详细阐述了用二氰亚甲基封端的(杂)芳烃。基于这些氰基功能化的结构单元,开发了大量的n型有机和聚合物半导体,与非氰化类似物相比,其前沿分子轨道(FMO)受到了极大的抑制。因此,在各种n型有机电子器件,包括有机薄膜晶体管(OTFT)、有机太阳能电池(OSC)和有机热电(OTE)中获得了非常有前途的器件性能。这些结果表明,氰基官能化是开发具有深层最低未占分子轨道(LUMO)的有机和聚合物半导体的强大策略,用于n型有机电子器件。最后,
更新日期:2023-06-13
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