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Direct Fast-Neutron Detection by 2D Perovskite Semiconductor
Small ( IF 13.0 ) Pub Date : 2023-06-06 , DOI: 10.1002/smll.202301530 Yuting Gao 1 , Pengying Wan 2 , Tong Jin 3 , Hao Hu 4 , Linyue Liu 2, 5 , Guangda Niu 3
Small ( IF 13.0 ) Pub Date : 2023-06-06 , DOI: 10.1002/smll.202301530 Yuting Gao 1 , Pengying Wan 2 , Tong Jin 3 , Hao Hu 4 , Linyue Liu 2, 5 , Guangda Niu 3
Affiliation
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Fast-neutrons play a critical role in a range of applications, including medical imaging, therapy, and nondestructive inspection. However, direct detecting fast-neutrons by semiconductors has proven to be challenging due to their weak interaction with most matter and the requirement of high carrier mobility-lifetime (µτ) product for efficient charge collection. Herein, a novel approach is presented to direct fast-neutron detection using 2D Dion–Jacobson perovskite semiconductor BDAPbBr4. This material features a high fast-neutron caption cross-section, good electrical stability, high resistivity, and, most importantly, a record-high µτ product of 3.3 × 10−4 cm2 V−1, outperforming most reported fast-neutron detection semiconductors. As a result, BDAPbBr4 detector exhibited good response to fast-neutrons, not only achieving fast-neutron energy spectra in counting mode, but also obtaining linear and fast response in integration mode. This work provides a paradigm-shifting strategy for designing materials that efficiently detect fast-neutrons and paves the way toward exciting applications in fast-neutron imaging and therapy.
中文翻译：
二维钙钛矿半导体直接快中子检测
快中子在医学成像、治疗和无损检测等一系列应用中发挥着关键作用。然而，事实证明，通过半导体直接检测快中子具有挑战性，因为它们与大多数物质的相互作用较弱，并且需要高载流子迁移率-寿命（μτ）乘积才能有效收集电荷。在此，提出了一种使用 2D Dion-Jacobson 钙钛矿半导体 BDAPbBr 4直接进行快中子检测的新方法。该材料具有高快中子截面、良好的电稳定性、高电阻率，最重要的是，创纪录的高μτ乘积为3.3 × 10 -4 cm 2 V -1，优于大多数报道的快中子探测半导体。结果表明，BDAPbBr 4探测器对快中子表现出良好的响应，不仅在计数模式下获得快中子能谱，而且在积分模式下获得线性且快速的响应。这项工作为设计有效检测快中子的材料提供了一种范式转变策略，并为快中子成像和治疗中令人兴奋的应用铺平了道路。
更新日期：2023-06-06
中文翻译：
二维钙钛矿半导体直接快中子检测
快中子在医学成像、治疗和无损检测等一系列应用中发挥着关键作用。然而，事实证明，通过半导体直接检测快中子具有挑战性，因为它们与大多数物质的相互作用较弱，并且需要高载流子迁移率-寿命（μτ）乘积才能有效收集电荷。在此，提出了一种使用 2D Dion-Jacobson 钙钛矿半导体 BDAPbBr 4直接进行快中子检测的新方法。该材料具有高快中子截面、良好的电稳定性、高电阻率，最重要的是，创纪录的高μτ乘积为3.3 × 10 -4 cm 2 V -1，优于大多数报道的快中子探测半导体。结果表明，BDAPbBr 4探测器对快中子表现出良好的响应，不仅在计数模式下获得快中子能谱，而且在积分模式下获得线性且快速的响应。这项工作为设计有效检测快中子的材料提供了一种范式转变策略，并为快中子成像和治疗中令人兴奋的应用铺平了道路。
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