Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. We present an asymmetric 2D heterostructure integrating MoTe₂, h-BN, and CuInP₂S₆ as a ferroelectric transistor, which exhibits an unusual property of anti-ambipolar transport characteristic under both positive and negative drain biases. Our results demonstrate that the anti-ambipolar behavior can be modulated by external electric field, achieving a peak-to-valley ratio up to 10³. We also provide a comprehensive explanation for the occurrence and modulation of the anti-ambipolar peak based on a model describing linked lateral-and-vertical charge behaviors. Our findings provide insights for designing and constructing anti-ambipolar transistors and other 2D devices with significant potential for future applications.

二维 (2D) 铁电晶体管拥有独特的属性和地位，特别是在低功耗存储器、内存计算和多功能逻辑器件方面。为了实现更好的功能，需要适当设计新的器件结构和材料组合。我们提出了一种集成MoTe ₂、h-BN和CuInP ₂ S ₆作为铁电晶体管的不对称二维异质结构，该晶体管在正漏极偏压和负漏极偏压下均表现出反双极输运特性。我们的结果表明，抗双极性行为可以通过外部电场进行调制，实现高达 10 3 的峰谷^比。我们还基于描述关联的横向和垂直电荷行为的模型，对反双极峰的出现和调制提供了全面的解释。我们的研究结果为设计和构建反双极晶体管和其他具有未来应用潜力的二维器件提供了见解。