用于高深宽比纳米级硅沟槽蚀刻工艺的异步脉冲等离子体,ACS Applied Nano Materials

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用于高深宽比纳米级硅沟槽蚀刻工艺的异步脉冲等离子体
ACS Applied Nano Materials ( IF 5.3 ) Pub Date : 2023-06-06 , DOI: 10.1021/acsanm.3c00807
Hee Ju Kim ₁ , Geun Young Yeom _{1,

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Affiliation

由于临界尺寸（CD）减小到深纳米级，高深宽比硅沟槽的制造变得越来越困难。特别是，深宽比相关蚀刻（ARDE）会随着图案宽度变小而降低蚀刻速率，从而使工艺均匀性变得更差。在本研究中，研究了异步脉冲期间偏置脉冲参数的影响（交替施加源功率和偏置功率），以及添加气体（例如 CF 4 和 C 4 F 8 ）对 Cl 期间纳米级 Si_沟槽刻蚀_特性的_影响。₂研究了/Ar等离子体蚀刻。研究发现，异步脉冲期间的偏置脉冲参数，例如偏置脉冲占空比和偏置脉冲延迟时间，可以通过改变异步脉冲期间的离子剂量和离子能量来影响蚀刻特性，例如蚀刻速率、蚀刻选择性和ARDE。蚀刻。然而，异步脉冲期间偏置脉冲参数的变化并没有显着改变蚀刻轮廓，并且显示出弓形的硅沟槽蚀刻轮廓。为了改善蚀刻轮廓，需要添加碳氟化合物气体，例如CF ₄和C ₄ F _{8 ，并且通过使用C}₄ F ₈代替CF ₄，由于碳氟化合物层改善了侧壁钝化，因此可以获得无侧壁弯曲的更加各向异性的硅蚀刻轮廓，尽管它降低了蚀刻选择性和ARDE。因此，相信通过用添加气体控制偏置脉冲参数，可以更容易地控制纳米级Si沟槽蚀刻特性。

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Asynchronously Pulsed Plasma for High Aspect Ratio Nanoscale Si Trench Etch Process

The fabrication of high aspect ratio Si trenches has been becoming difficult due to the decrease in critical dimension (CD) to deep nanoscale. Especially, aspect ratio dependent etching (ARDE), which decreases the etch rate as the pattern width gets smaller, makes process uniformity get worse. In this study, the effects of bias pulsing parameters during asynchronous pulsing, which alternatively applies the source power and bias power, as well as the effect of additive gas such as CF₄ and C₄F₈ on the nanoscale Si trench etch characteristics during Cl₂/Ar plasma etching were investigated. It was found that the bias pulsing parameters during the asynchronous pulsing, such as bias pulse duty ratio and bias pulse delay time, can affect the etch characteristics such as etch rate, etch selectivity, and ARDE by changing the ion dose and ion energy during the etching. However, the variation of bias pulse parameters during the asynchronous pulsing did not change the etch profile noticeably, and it showed bowed Si trench etch profiles. To improve the etch profile, the addition of fluorocarbon gas such as CF₄ and C₄F₈ was required, and by using C₄F₈ instead of CF₄, more anisotropic Si etch profile without sidewall bowing could be obtained due to the improved sidewall passivation by a fluorocarbon layer even though it degraded etch selectivity and ARDE. Therefore, it is believed that by controlling the bias pulsing parameters with additive gas, nanoscale Si trench etch characteristics can be more easily controlled.

更新日期：2023-06-06

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