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A survey of conductive and radiated EMI reduction techniques in power electronics converters across wide-bandgap devices
IET Power Electronics ( IF 1.7 ) Pub Date : 2023-06-02 , DOI: 10.1049/pel2.12532
Chentao Li 1 , Qishuang Ma 1 , Yajing Tong 1 , Jinsong Wang 1 , Ping Xu 1
Affiliation  

Nowadays, wide-bandgap (WBG) devices, primarily made from silicon carbide (SiC) and gallium nitride (GaN), are widely applied in power generation, transmission, and conversion. Moreover, the application of WBG devices has had a transformative impact in the field of energy conversion. Compared with Si counterparts, SiC and GaN can remarkably improve the power conversion system efficiency and power density while generating higher electromagnetic interference (EMI) emissions. There are many studies on WBG devices and their behaviour in power systems. However, methods of mitigating EMI/electromagnetic compatibility (EMC) still lack scientific guidance. This article reviews the characteristics of WBG devices, and the significant EMI problems are discussed. Then, the EMI types, EMI causes, and methods of EMI reduction are summarized, and the advantages and disadvantages of these methods are presented as well. Based on the reviewed studies, future research, and the conclusions of this article on EMI/EMC are discussed to help relevant researchers deepen their understanding of the new challenges of EMI brought by the applications of WBG devices, which are useful in engineering.

中文翻译:

宽带隙器件电力电子转换器中传导和辐射 EMI 降低技术的调查

如今,宽带隙(WBG)器件主要由碳化硅(SiC)和氮化镓(GaN)制成,广泛应用于发电、传输和转换领域。此外,WBG器件的应用对能量转换领域产生了革命性的影响。与 Si 同类产品相比,SiC 和 GaN 可以显着提高功率转换系统效率和功率密度,同时产生更高的电磁干扰 (EMI) 发射。关于宽带隙器件及其在电力系统中的行为有很多研究。然而,缓解 EMI/电磁兼容性 (EMC) 的方法仍然缺乏科学指导。本文回顾了 WBG 器件的特性,并讨论了重要的 EMI 问题。然后总结了EMI的类型、EMI的原因以及降低EMI的方法,并介绍了这些方法的优点和缺点。在回顾研究的基础上,对未来的研究以及本文关于EMI/EMC的结论进行了讨论,以帮助相关研究人员加深对WBG器件应用所带来的EMI新挑战的理解,这在工程上是有用的。
更新日期:2023-06-02
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