使用 EFG 的 β-Ga2O3 晶体 (100) 平面生长中孪晶的起源,CrystEngComm

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使用 EFG 的 β-Ga2O3 晶体 (100) 平面生长中孪晶的起源
CrystEngComm ( IF 2.6 ) Pub Date : 2023-05-29 , DOI: 10.1039/d3ce00249g
Yuzhe Bu _{1,

2} , Jinshan Wei ₃ , Qinglin Sai ₁ , Hongji Qi _{1,

4}

Affiliation

孪晶是β-Ga ₂ O ₃晶体中常见的缺陷，影响大尺寸单晶衬底的研制。为了研究孪晶的产生和发展，我们使用边缘限定的薄膜供给生长 (EFG)生长了 (100) 取向的 β-Ga ₂ O _3晶体。我们通过偏振光应力计、化学蚀刻、激光扫描共聚焦显微镜 (LSCM) 和透射电子显微镜 (TEM) 对包含双胞胎的 (010) 样品进行了表征。偏振光压力计可以清楚地区分有双胞胎的区域和没有双胞胎的区域。_{H 3} PO ₄后在 150 °C 下蚀刻 1 小时，LSCM 观察显示蚀刻坑在 (100) 双边界上具有镜像对称性，蚀刻坑阵列与边界之间的角度约为 77°。孪晶起源于沿[ 0 ]方向的边界（10 [2 结合马克龙]

），几乎垂直于（100）面，然后在靠近晶体内部的一侧呈阶梯状生长。靠近晶体边缘一侧的孪晶界先是逐步延伸，然后逐渐弯曲长大，最终在两侧形成（100）孪晶界。TEM 观察揭示了在具有 [ 0 ] 取向分量的孪晶边界两侧的不同原子密度排列。此外，两者（10 [2 结合马克龙]

)和(100)是β-Ga ₂ O ₃晶体的滑移面，表明孪晶的产生与滑移面密切相关。

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The origin of twins in the growth of the (100) plane of a β-Ga2O3 crystal using EFG

Twins are common defects in β-Ga₂O₃ crystals that affect the development of large single crystal substrates. To investigate the generation and development of twins, we grew a (100) oriented β-Ga₂O₃ crystal using edge-defined film-fed growth (EFG). We characterized the (010) sample containing twins by polarized light stress meter, chemical etching, laser scanning confocal microscopy (LSCM) and transmission electron microscopy (TEM). The polarized light stress meter clearly distinguishes areas containing twins from those without. After H₃PO₄ etching at 150 °C for 1 h, LSCM observations revealed etch pits with mirror symmetry across the (100) twin boundary, with an angle of approximately 77° between the array of etch pits and the boundary. The twins originate at the boundary (10 [2 with combining macron]

) along the [ [2 with combining macron]

] direction, which is nearly perpendicular to the (100) plane, and then grow in steps on the side near the interior of the crystal. The twin boundary on the side near the edge of the crystal first undergoes stepwise extension and then gradually bends and grows, eventually forming a (100) twin boundary on both sides. TEM observations reveal a different arrangement of atomic density on either side of the twin boundary possessing the [ [2 with combining macron]

] orientation component. Furthermore, both (10 [2 with combining macron]

) and (100) are slip planes for the β-Ga₂O₃ crystal, indicating that the generation of twins is closely related to the slip plane.

更新日期：2023-05-29

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