Boron containing MoSi₂ is a promising material for applications at high temperature, but the oxidation mechanism is still unclear. In this work, the high temperature (1100 °C) oxidation of B doped MoSi₂ in synthetic air has been investigated. A (boro)silicate layer is formed on the surface of the alloy, which features a mixture of amorphous SiO₂ and cristobalite. After an initial transient period, the oxidation kinetics follows a parabolic growth rate law. The growth rate constant of the oxide layer is enhanced by the boron in the alloy by 90 % per at.% B. The increase in growth rate is associated with boron mitigating the formation of cristobalite thereby promoting the formation of amorphous SiO₂.

含硼的 MoSi ₂是一种很有前途的高温应用材料，但其氧化机理仍不清楚。在这项工作中，研究了B 掺杂的 MoSi ₂在合成空气中的高温 (1100 °C) 氧化。合金表面形成一层（硼）硅酸盐层，其特征是非晶SiO ₂和方英石的混合物。在初始瞬变期之后，氧化动力学遵循抛物线增长率定律。氧化物层的生长速率常数被合金中的硼提高了 90%/at.% B。生长速率的增加与硼减轻方英石的形成从而促进非晶 SiO 2 的形成_有关。