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Interface modified Si@SiO2/PVDF composite dielectrics with synchronously ameliorative dielectric and mechanical properties
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2023-05-25 , DOI: 10.1002/app.54214 Fanrong Kong 1 , Wenying Zhou 1 , Weiwei Peng 1 , Chen Liang 2 , Hongju Wu 1 , Na Lin 1 , Guangheng Wang 1 , Dengfeng Liu 1 , Aihong Feng 1 , Xiangrong Liu 1
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2023-05-25 , DOI: 10.1002/app.54214 Fanrong Kong 1 , Wenying Zhou 1 , Weiwei Peng 1 , Chen Liang 2 , Hongju Wu 1 , Na Lin 1 , Guangheng Wang 1 , Dengfeng Liu 1 , Aihong Feng 1 , Xiangrong Liu 1
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To efficaciously decrease dielectric loss while still synchronously harvesting a high dielectric constant (ε′) and breakdown strength (Eb), as well as good mechanical properties in silicon (Si)/poly(vinylidene fluoride) (PVDF), in this work, the core@shell structured Si@silicon dioxide (SiO2) particles were first prepared via a high temperature oxidation, and subsequently incorporated into the PVDF to generate morphology-dependent composites with a high-ε′ and Eb but low loss. The SiO2 shell effects on the morphology, dielectric, and mechanical properties of PVDF composites were explored. In comparison to pristine Si/PVDF, the Si@SiO2/PVDF presents significantly suppressed loss and boosted Eb because the SiO2 interlayer not only efficiently blocks the connection between the raw Si and greatly impedes the long-range charges migration even at high filler loadings, but also obviously improves the compatibility between Si and PVDF at the interfaces which promotes fillers' uniform dispersion in host matrix, thus leading to enhanced dielectric and mechanical properties. The fitting result by the Havriliak–Negami equation theoretically elucidates the SiO2 interlayer's suppression effect on charge migration behavior in the composites. More importantly, dielectric properties can be efficiently turned via tailoring the SiO2 shell thickness. The Si@SiO2/PVDF with simultaneously enhanced dielectric and mechanical performances shows promising uses in the electrical and microelectronics industries.
中文翻译：
介电性能和机械性能同步改善的界面改性Si@SiO2/PVDF复合电介质
为了有效降低介电损耗，同时仍同步获得高介电常数 ( ε ′) 和击穿强度 ( E b )，以及硅 (Si)/聚偏二氟乙烯 (PVDF) 的良好机械性能，在这项工作中，首先通过高温氧化制备核@壳结构的Si@二氧化硅（SiO 2 ）颗粒，然后将其掺入PVDF中，生成具有高ε ′和E b但损耗低的形态依赖型复合材料。探讨了SiO 2壳对PVDF复合材料的形貌、介电和机械性能的影响。与原始的 Si/PVDF 相比，Si@SiO 2/PVDF 表现出显着抑制的损耗和提高的E b，因为 SiO 2中间层不仅有效地阻挡了原始 Si 之间的连接，即使在高填料负载量下也极大地阻碍了长程电荷迁移，而且还显着提高了 Si 和 PVDF 之间的相容性界面处促进填料在主体基质中的均匀分散，从而提高介电和机械性能。Havriliak-Negami方程的拟合结果从理论上阐明了SiO 2中间层对复合材料中电荷迁移行为的抑制作用。更重要的是，通过调整 SiO 2壳厚度可以有效地改变介电性能。硅@二氧化硅2 /PVDF 同时增强介电性能和机械性能，在电气和微电子工业中显示出广阔的应用前景。
更新日期：2023-05-25
中文翻译：
介电性能和机械性能同步改善的界面改性Si@SiO2/PVDF复合电介质
为了有效降低介电损耗，同时仍同步获得高介电常数 ( ε ′) 和击穿强度 ( E b )，以及硅 (Si)/聚偏二氟乙烯 (PVDF) 的良好机械性能，在这项工作中，首先通过高温氧化制备核@壳结构的Si@二氧化硅（SiO 2 ）颗粒，然后将其掺入PVDF中，生成具有高ε ′和E b但损耗低的形态依赖型复合材料。探讨了SiO 2壳对PVDF复合材料的形貌、介电和机械性能的影响。与原始的 Si/PVDF 相比，Si@SiO 2/PVDF 表现出显着抑制的损耗和提高的E b，因为 SiO 2中间层不仅有效地阻挡了原始 Si 之间的连接，即使在高填料负载量下也极大地阻碍了长程电荷迁移，而且还显着提高了 Si 和 PVDF 之间的相容性界面处促进填料在主体基质中的均匀分散，从而提高介电和机械性能。Havriliak-Negami方程的拟合结果从理论上阐明了SiO 2中间层对复合材料中电荷迁移行为的抑制作用。更重要的是，通过调整 SiO 2壳厚度可以有效地改变介电性能。硅@二氧化硅2 /PVDF 同时增强介电性能和机械性能，在电气和微电子工业中显示出广阔的应用前景。
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