用于 23.4% 效率的单片 Cu(In,Ga)Se2-钙钛矿串联太阳能电池的 NiOx:Cu-SAM 空穴传输双层的高级表征和优化,Advanced Functional Materials

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用于 23.4% 效率的单片 Cu(In,Ga)Se2-钙钛矿串联太阳能电池的 NiOx:Cu-SAM 空穴传输双层的高级表征和优化
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-05-25 , DOI: 10.1002/adfm.202302924
Ivona Kafedjiska ₁ , Igal Levine ₂ , Artem Musiienko ₂ , Natalia Maticiuc ₁ , Tobias Bertram ₁ , Amran Al‐Ashouri ₃ , Christian A. Kaufmann ₁ , Steve Albrecht _{3,

4} , Rutger Schlatmann _{1,

5} , Iver Lauermann ₁

Affiliation

研究了单结钙钛矿和 Cu(In, Ga)Se ₂ (CIGSe)-钙钛矿串联太阳能电池中五个空穴传输层 (HTL) 的性能：氧化镍 (NiO _x ,)、铜掺杂氧化镍(NiO _x :Cu)、NiO _x +SAM、NiO _x：Cu+SAM 和 SAM，其中 SAM 是[2-(3,-6二甲氧基-9H-咔唑-9基)乙基]膦酸 (MeO-2PACz) 自组装单层。器件的性能与 HTL/钙钛矿界面处的载流子动力学相关，并且通过执行时间分辨和绝对光致发光 ((Tr)PL)、瞬态表面光电压 (tr-SPV) 来分析这些 HTL 的限制因素）以及氧化铟锡 (ITO)/HTL/钙钛矿和 CIGSe/HTL/钙钛矿堆栈的 X 射线/紫外光电子能谱 (XPS/UPS) 测量。_{基于 NiO x}的器件检测到高准费米能级分裂开路 (QFLS- V _oc ) 缺陷，这归因于 NiO _{x处的电子捕获和空穴提取不良}-钙钛矿界面和钙钛矿主体中的低载流子有效寿命。同时，用2% Cu掺杂NiO _x并用MeO-2PACz钝化其表面抑制了电子俘获，增强了空穴提取，减少了非辐射界面复合，并改善了能带对准。由于这种优异的界面载流子动力学，NiO _x :Cu+SAM 被认为是最适合单片 CIGSe-钙钛矿串联器件的 HTL，可实现23.4% 的功率转换效率 ( PCE )、 1.72 的V _oc V 和填充因子 ( FF ) 为 71%，而其余 4 个 HTL 则存在突出的V _oc和FF 损失。

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Advanced Characterization and Optimization of NiOx:Cu-SAM Hole-Transporting Bi-Layer for 23.4% Efficient Monolithic Cu(In,Ga)Se2-Perovskite Tandem Solar Cells

The performance of five hole-transporting layers (HTLs) is investigated in both single-junction perovskite and Cu(In, Ga)Se₂ (CIGSe)-perovskite tandem solar cells: nickel oxide (NiO_x,), copper-doped nickel oxide (NiO_x:Cu), NiO_x+SAM, NiO_x:Cu+SAM, and SAM, where SAM is the [2-(3,-6Dimethoxy-9H-carbazol-9yl)ethyl]phosphonic acid (MeO-2PACz) self-assembled monolayer. The performance of the devices is correlated to the charge-carrier dynamics at the HTL/perovskite interface and the limiting factors of these HTLs are analyzed by performing time-resolved and absolute photoluminescence ((Tr)PL), transient surface photovoltage (tr-SPV), and X-ray/UV photoemission spectroscopy (XPS/UPS) measurements on indium tin oxide (ITO)/HTL/perovskite and CIGSe/HTL/perovskite stacks. A high quasi-Fermi level splitting to open-circuit (QFLS-V_oc) deficit is detected for the NiO_x-based devices, attributed to electron trapping and poor hole extraction at the NiO_x-perovskite interface and a low carrier effective lifetime in the bulk of the perovskite. Simultaneously, doping the NiO_x with 2% Cu and passivating its surface with MeO-2PACz suppresses the electron trapping, enhances the holes extraction, reduces the non-radiative interfacial recombination, and improves the band alignment. Due to this superior interfacial charge-carrier dynamics, NiO_x:Cu+SAM is found to be the most suitable HTL for the monolithic CIGSe-perovskite tandem devices, enabling a power-conversion efficiency (PCE) of 23.4%, V_oc of 1.72V, and a fill factor (FF) of 71%, while the remaining four HTLs suffer from prominent V_oc and FF losses.

更新日期：2023-05-25

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