This work reports morphologically alike, high-quality monolayer MoS₂ flakes with a similar strain at various growth temperatures (750–900°C) achieved by adjusting sulfur temperature. The growth dynamics of MoS₂ are correlated with changes in the photoluminescence (PL) and Raman peak positions. Monolayer MoS₂ crystals are synthesized at different growth temperatures from 750°C to 900°C using chemical vapor deposition (CVD). We examined the structural quality and aimed to extract the recombination mechanisms in MoS₂ using low-temperature, variable, and low-laser-intensity PL measurements. Our studies of the defect-associated bound exciton emission are well correlated with the blueshift in the A_1g mode of Raman spectra, blueshift in PL spectra, and x-ray photoelectron spectroscopy results for crystal grown at 900°C. Our research findings not only shed light on a thorough, non-intrusive method for modifying growth parameters to enhance optical performance, but they also suggest a way to modify the optical characteristics of MoS₂ while maintaining the morphology.