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Robust Threshold-Switching Behavior Assisted by Cu Migration in a Ferroionic CuInP2S6 Heterostructure
ACS Nano ( IF 15.8 ) Pub Date : 2023-05-15 , DOI: 10.1021/acsnano.3c02406 Zhipeng Zhong 1 , Shuaiqin Wu 1, 2 , Xiang Li 1 , Zhiqiang Wang 1 , Qianyi Yang 1 , Bangchi Huang 1 , Yan Chen 1, 2 , Xudong Wang 2 , Tie Lin 2 , Hong Shen 2 , Xiangjian Meng 2 , Ming Wang 3, 4 , Wu Shi 5, 6 , Jianlu Wang 1, 2, 3, 4 , Junhao Chu 1, 2 , Hai Huang 1, 2, 4, 6
ACS Nano ( IF 15.8 ) Pub Date : 2023-05-15 , DOI: 10.1021/acsnano.3c02406 Zhipeng Zhong 1 , Shuaiqin Wu 1, 2 , Xiang Li 1 , Zhiqiang Wang 1 , Qianyi Yang 1 , Bangchi Huang 1 , Yan Chen 1, 2 , Xudong Wang 2 , Tie Lin 2 , Hong Shen 2 , Xiangjian Meng 2 , Ming Wang 3, 4 , Wu Shi 5, 6 , Jianlu Wang 1, 2, 3, 4 , Junhao Chu 1, 2 , Hai Huang 1, 2, 4, 6
Affiliation
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The two-dimensional layered material CuInP2S6 (CIPS) has attracted significant research attention due to its nontrivial physical properties, including room-temperature ferroelectricity at the ultrathin limit and substantial ionic conductivity. Despite many efforts to control its ionic conductance and develop electronic devices, such as memristors, improving the stability of these devices remains a challenge. This work presents a highly stable threshold-switching device based on the Cu/CIPS/graphene heterostructure, achieved after a comprehensive investigation of the activation of Cu’s ionic conductivity. The device exhibits exceptional threshold-switching performance, including good cycling endurance, a high on/off ratio of up to 104, low operation voltages, and an ultrasmall subthreshold swing of less than 1.8 mV/decade for the resistance-switching process. Through temperature-dependent electrical and Raman spectroscopy measurements, the stable resistive-switching mechanism is interpreted with a drifting and diffusion model of Cu ions under the electric field, rather than the conventional conducting filament mechanism. These results make the layered ferroionic CIPS material a promising candidate for information storage devices, demonstrating a compelling approach to achieving high-performance threshold-switching memristor devices.
中文翻译：
铁离子 CuInP2S6 异质结构中 Cu 迁移辅助的鲁棒阈值切换行为
二维层状材料CuInP 2 S 6 (CIPS)因其非凡的物理特性（包括超薄极限的室温铁电性和显着的离子电导率）而引起了广泛的研究关注。尽管在控制其离子电导和开发忆阻器等电子器件方面做出了许多努力，但提高这些器件的稳定性仍然是一个挑战。这项工作提出了一种基于 Cu/CIPS/石墨烯异质结构的高度稳定的阈值开关器件，是在对 Cu 离子电导率的激活进行全面研究后实现的。该器件具有卓越的阈值开关性能，包括良好的循环耐久性、高达 10 4的高开/关比、低工作电压以及电阻开关过程的小于 1.8 mV/十倍频程的超小亚阈值摆幅。通过与温度相关的电学和拉曼光谱测量，稳定的电阻切换机制是用电场下铜离子的漂移和扩散模型来解释的，而不是传统的导电丝机制。这些结果使得层状铁离子 CIPS 材料成为信息存储器件的有前途的候选材料，展示了实现高性能阈值切换忆阻器器件的一种引人注目的方法。
更新日期：2023-05-15
中文翻译：
铁离子 CuInP2S6 异质结构中 Cu 迁移辅助的鲁棒阈值切换行为
二维层状材料CuInP 2 S 6 (CIPS)因其非凡的物理特性（包括超薄极限的室温铁电性和显着的离子电导率）而引起了广泛的研究关注。尽管在控制其离子电导和开发忆阻器等电子器件方面做出了许多努力，但提高这些器件的稳定性仍然是一个挑战。这项工作提出了一种基于 Cu/CIPS/石墨烯异质结构的高度稳定的阈值开关器件，是在对 Cu 离子电导率的激活进行全面研究后实现的。该器件具有卓越的阈值开关性能，包括良好的循环耐久性、高达 10 4的高开/关比、低工作电压以及电阻开关过程的小于 1.8 mV/十倍频程的超小亚阈值摆幅。通过与温度相关的电学和拉曼光谱测量，稳定的电阻切换机制是用电场下铜离子的漂移和扩散模型来解释的，而不是传统的导电丝机制。这些结果使得层状铁离子 CIPS 材料成为信息存储器件的有前途的候选材料，展示了实现高性能阈值切换忆阻器器件的一种引人注目的方法。
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