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Toward Ultrahigh Thermoelectric Performance of Cu2SnS3-Based Materials by Analog Alloying
Small ( IF 13.0 ) Pub Date : 2023-05-13 , DOI: 10.1002/smll.202301963 Wang Li 1 , Yubo Luo 1 , Tian Xu 1 , Zheng Ma 1 , Chengjun Li 1 , Yingchao Wei 1 , Yang Tao 1 , Yongxin Qian 1 , Xin Li 1 , Qinghui Jiang 1 , Junyou Yang 1
Small ( IF 13.0 ) Pub Date : 2023-05-13 , DOI: 10.1002/smll.202301963 Wang Li 1 , Yubo Luo 1 , Tian Xu 1 , Zheng Ma 1 , Chengjun Li 1 , Yingchao Wei 1 , Yang Tao 1 , Yongxin Qian 1 , Xin Li 1 , Qinghui Jiang 1 , Junyou Yang 1
Affiliation
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Cu2SnS3 is a promising thermoelectric candidate for power generation at medium temperature due to its low-cost and environmental-benign features. However, the high electrical resistivity due to low hole concentration severely restricts its final thermoelectric performance. Here, analog alloying with CuInSe2 is first adopted to optimize the electrical resistivity by promoting the formation of Sn vacancies and the precipitation of In, and optimize lattice thermal conductivity through the formation of stacking faults and nanotwins. Such analog alloying enables a greatly enhanced power factor of 8.03 µW cm−1 K−2 and a largely reduced lattice thermal conductivity of 0.38 W m−1 K−1 for Cu2SnS3 – 9 mol.% CuInSe2. Eventually, a peak ZT as high as 1.14 at 773 K is achieved for Cu2SnS3 – 9 mol.% CuInSe2, which is one of the highest ZT among the researches on Cu2SnS3-based thermoelectric materials. The work implies analog alloying with CuInSe2 is a very effective route to unleash superior thermoelectric performance of Cu2SnS3.
中文翻译：
通过模拟合金化实现 Cu2SnS3 基材料的超高热电性能
Cu 2 SnS 3因其低成本和环境友好的特性而成为一种有前途的中温发电热电候选材料。然而，低空穴浓度导致的高电阻率严重限制了其最终的热电性能。这里，首先采用CuInSe 2模拟合金化，通过促进Sn空位的形成和In的沉淀来优化电阻率，并通过堆垛层错和纳米孪晶的形成来优化晶格导热率。这种模拟合金化使得Cu 2 SnS 3 – 9 mol.% CuInSe 2的功率因数大大提高为8.03 µW cm -1 K -2，晶格热导率大大降低为0.38 W m -1 K -1。最终，Cu 2 SnS 3 – 9 mol.% CuInSe 2在773 K下实现了高达1.14的峰值ZT ，这是Cu 2 SnS 3基热电材料研究中ZT最高的之一。这项工作表明，使用 CuInSe 2进行模拟合金化是释放 Cu 2 SnS 3优异热电性能的非常有效的途径。
更新日期：2023-05-13
中文翻译：
通过模拟合金化实现 Cu2SnS3 基材料的超高热电性能
Cu 2 SnS 3因其低成本和环境友好的特性而成为一种有前途的中温发电热电候选材料。然而，低空穴浓度导致的高电阻率严重限制了其最终的热电性能。这里，首先采用CuInSe 2模拟合金化，通过促进Sn空位的形成和In的沉淀来优化电阻率，并通过堆垛层错和纳米孪晶的形成来优化晶格导热率。这种模拟合金化使得Cu 2 SnS 3 – 9 mol.% CuInSe 2的功率因数大大提高为8.03 µW cm -1 K -2，晶格热导率大大降低为0.38 W m -1 K -1。最终，Cu 2 SnS 3 – 9 mol.% CuInSe 2在773 K下实现了高达1.14的峰值ZT ，这是Cu 2 SnS 3基热电材料研究中ZT最高的之一。这项工作表明，使用 CuInSe 2进行模拟合金化是释放 Cu 2 SnS 3优异热电性能的非常有效的途径。
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