Abstract

Effects of Ba⁺-ion implantation into silicate glass and its after annealing on the composition, density of electronic states, and parameters of the energy bands are investigated by Auger electron, ultraviolet photoelectron, and light-absorption spectroscopic techniques. It is shown that nonstoichiometric oxides of Si, Pb, and Ba, as well as unbound atoms of the same elements, are formed in the ion implanted layer after ion implantation. As a result, there is a significant change in the electronic structure of silicate glass, in particular, the band gap decreases by ∼2 eV. After annealing at T = 1000 K, unbound Si, Pb, and Ba atoms disappear in the ion implanted layer (within the limits of sensitivity of an Auger-electron spectrometer) and stoichiometric oxides such as SiO₂, PbO, and BaO are formed.