Achieving Highly Sensitive Near-Infrared Organic Photodetectors using Asymmetric Non-Fullerene Acceptor,Advanced Optical Materials

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Achieving Highly Sensitive Near-Infrared Organic Photodetectors using Asymmetric Non-Fullerene Acceptor
Advanced Optical Materials ( IF 8.0 ) Pub Date : 2023-05-05 , DOI: 10.1002/adom.202300312
Un‐Hak Lee _{1,

2} , Byoungwook Park ₁ , Seunghyun Rhee ₁ , Jong‐Woon Ha ₁ , Dong Ryeol Whang ₃ , Hyeong Ju Eun ₄ , Jong H. Kim ₄ , Yeongseok Shim ₅ , Junseok Heo ₅ , Changjin Lee ₁ , Bumjoon J. Kim ₂ , Sung Cheol Yoon ₁ , Jaewon Lee ₆ , Seo‐Jin Ko ₁

Affiliation

Organic photodetectors (OPDs) based on non-fullerene acceptors (NFAs) have received considerable attention because of their potential for use in various commercial applications as near-infrared (NIR) light sensing platforms. However, recent OPDs suffer from low NIR photoresponse and large dark/noise currents with narrow bandgap organic photoactive materials. Herein, a π-bridge molecular engineering strategy replacing alkoxythienyl with benzothiadiazole for ultra-narrow bandgap (ultra-NBG) NFAs is designed to achieve simultaneously high photoresponse at NIR region and low noise current density, thereby leading to excellent NIR (≈1050 nm) detectivity (D^*). The newly synthesized ultra-NBG NFAs, namely COB and CBT with optical bandgaps below 1.14 eV, present high responsivity (R) with 0.369 and 0.080 A W⁻¹, respectively, at a wavelength of 1050 nm. Especially, with effectively suppressed noise current density, COB-based OPD exhibits a high NIR (≈1050 nm) D^* value of 2.18 × 10¹¹ cm Hz^1/2 W⁻¹ at −0.5 V bias. The obtained R and D^* values for these NFAs exceed or are comparable to those of a commercial Si photodetector at 1050 nm. This work provides important insight into the π-bridge molecular engineering strategy for ultra-NBG NFAs, which facilitate achieving highly sensitive NIR OPDs with high NIR photoresponse and low dark/noise current.

中文翻译：

使用不对称非富勒烯受体实现高灵敏度近红外有机光电探测器

基于非富勒烯受体（NFA）的有机光电探测器（OPD）因其作为近红外（NIR）光传感平台在各种商业应用中的潜力而受到广泛关注。然而，最近的 OPD 面临着窄带隙有机光活性材料的近红外光响应低和暗/噪声电流大的问题。在此，设计了一种用苯并噻二唑取代烷氧基噻吩基的π桥分子工程策略，用于超窄带隙（ultra-NBG）NFA，以同时实现近红外区域的高光响应和低噪声电流密度，从而产生优异的近红外（≈1050 nm ）探测率 ( D ^*）。新合成的超NBG NFA，即光学带隙低于1.14 eV的COB和CBT，在1050 nm波长下分别表现出0.369和0.080 AW ^-1的高响应度（R）。特别是，在有效抑制噪声电流密度的情况下，基于COB的OPD在-0.5 V偏压下表现出2.18 × 10 ¹¹ cm Hz ^1/2 W ^-1的高NIR（≈1050 nm）D ^*值。这些 NFA获得的R和D ^*值超过或相当于商业 Si 光电探测器在 1050 nm 处的 R 和 D * 值。这项工作提供了对π的重要见解-超NBG NFA的桥梁分子工程策略，有助于实现具有高NIR光响应和低暗/噪声电流的高灵敏度NIR OPD。

更新日期：2023-05-05

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