Two-dimensional (2D) layered semiconductors with nonlinear optical (NLO) properties hold great promise to address the growing demand of multifunction integration in electronic-photonic integrated circuits (EPICs). However, electronic-photonic co-design with 2D NLO semiconductors for on-chip telecommunication is limited by their essential shortcomings in terms of unsatisfactory optoelectronic properties, odd-even layer-dependent NLO activity and low NLO susceptibility in telecom band. Here we report the synthesis of 2D SnP₂Se₆, a van der Waals NLO semiconductor exhibiting strong odd-even layer-independent second harmonic generation (SHG) activity at 1550 nm and pronounced photosensitivity under visible light. The combination of 2D SnP₂Se₆ with a SiN photonic platform enables the chip-level multifunction integration for EPICs. The hybrid device not only features efficient on-chip SHG process for optical modulation, but also allows the telecom-band photodetection relying on the upconversion of wavelength from 1560 to 780 nm. Our finding offers alternative opportunities for the collaborative design of EPICs.

具有非线性光学 (NLO) 特性的二维 (2D) 层状半导体有望满足电子光子集成电路 (EPIC) 中日益增长的多功能集成需求。然而，用于片上电信的 2D NLO 半导体的电子-光子协同设计受到它们在光电特性不令人满意、依赖奇偶层的 NLO 活动和电信频段中低 NLO 敏感性等基本缺点的限制。_{在这里，我们报告了 2D SnP 2} Se ₆的合成，这是一种范德瓦尔斯 NLO 半导体，在 1550 nm 处表现出强烈的奇偶层独立二次谐波产生 (SHG) 活性，并且在可见光下具有显着的光敏性。_{2D SnP 2} Se ₆的组合使用 SiN 光子平台可以实现 EPIC 的芯片级多功能集成。该混合器件不仅具有用于光调制的高效片上 SHG 工艺，而且还允许依靠波长从 1560 nm 到 780 nm 的上转换进行电信波段光电检测。我们的发现为 EPIC 的协作设计提供了替代机会。