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Rough FTO electrode interface effect upon ferroelectric switching dynamics in Ag/P(VDF-HFP)/FTO capacitor structures
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2023-05-02 , DOI: 10.1002/app.54042
Jyotirmoy Roy 1 , Bekcy Joseph 1 , R. B. Gangineni 1
Journal of Applied Polymer Science ( IF 2.7 ) Pub Date : 2023-05-02 , DOI: 10.1002/app.54042
Jyotirmoy Roy 1 , Bekcy Joseph 1 , R. B. Gangineni 1
Affiliation
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Rough FTO electrode interface effect upon the characteristic ferroelectric polarization parameters and switching dynamics in Ag/P(VDF-HFP)/FTO junctions is systematically evaluated by varying electric field amplitude and frequency. Structural and microstructural studies confirm the ferroelectric phase formation of P(VDF-HFP) on FTO surface. Tilted rectangular P-E loops have been recorded in the applied fields ranging over 156.25–468.75 MV/m measured between 250 mHz and 5 Hz frequency ranges. Giant saturation of 21.7 μC/cm2 and remnant polarization of 34.9 μC/cm2 has been noted at low frequencies due to the influence of high electric field induced leakage currents. The coercive field, saturation and remnant polarization response with increase in electric field amplitude and frequency of the applied signal are well fitted with classic domain growth model proposed by Kolmogorov-Avrami-Ishibashi. A switching time scales of 32.2–693 ms has been observed for forward switching while for backward switching it is noted as 22.1–618.8 ms, when measured at frequencies from 5 Hz to 250 mHz. Furthermore, the tilted P-E loops are attributed to the excessive leakage currents due to the high surface roughness of FTO bottom electrode.
中文翻译：
粗糙的 FTO 电极界面对 Ag/P(VDF-HFP)/FTO 电容器结构中铁电开关动力学的影响
通过改变电场幅度和频率，系统地评估了粗糙 FTO 电极界面对 Ag/P(VDF-HFP)/FTO 结中特征铁电极化参数和开关动力学的影响。结构和微观结构研究证实了 FTO 表面上 P(VDF-HFP) 的铁电相形成。在 250 mHz 和 5 Hz 频率范围内测量的超过 156.25–468.75 MV/m 的应用场中记录了倾斜的矩形 PE 环路。21.7 μC/cm 2的巨饱和度和 34.9 μC/cm 2的剩余极化由于高电场感应漏电流的影响，在低频时已经注意到。随着施加信号的电场幅度和频率的增加，矫顽场、饱和度和剩余极化响应与 Kolmogorov-Avrami-Ishibashi 提出的经典磁畴增长模型非常吻合。当在 5 Hz 至 250 mHz 的频率下测量时，正向切换的切换时间标度为 32.2–693 ms，而反向切换的切换时间标度为 22.1–618.8 ms。此外，倾斜的 PE 环路归因于 FTO 底部电极的高表面粗糙度导致的过大泄漏电流。
更新日期：2023-05-02
中文翻译：
粗糙的 FTO 电极界面对 Ag/P(VDF-HFP)/FTO 电容器结构中铁电开关动力学的影响
通过改变电场幅度和频率，系统地评估了粗糙 FTO 电极界面对 Ag/P(VDF-HFP)/FTO 结中特征铁电极化参数和开关动力学的影响。结构和微观结构研究证实了 FTO 表面上 P(VDF-HFP) 的铁电相形成。在 250 mHz 和 5 Hz 频率范围内测量的超过 156.25–468.75 MV/m 的应用场中记录了倾斜的矩形 PE 环路。21.7 μC/cm 2的巨饱和度和 34.9 μC/cm 2的剩余极化由于高电场感应漏电流的影响，在低频时已经注意到。随着施加信号的电场幅度和频率的增加，矫顽场、饱和度和剩余极化响应与 Kolmogorov-Avrami-Ishibashi 提出的经典磁畴增长模型非常吻合。当在 5 Hz 至 250 mHz 的频率下测量时，正向切换的切换时间标度为 32.2–693 ms，而反向切换的切换时间标度为 22.1–618.8 ms。此外，倾斜的 PE 环路归因于 FTO 底部电极的高表面粗糙度导致的过大泄漏电流。
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