用于 Bi2Te3 基热电器件的 Ni/Bi2Te3 接头的增强接触性能和热耐受性,ACS Applied Materials & Interfaces

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用于 Bi2Te3 基热电器件的 Ni/Bi2Te3 接头的增强接触性能和热耐受性
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-05-01 , DOI: 10.1021/acsami.3c01904
Jianqiang Zhang ₁ , Ping Wei _{1,

2} , Huiqiang Zhang ₁ , Longzhou Li ₁ , Wanting Zhu ₁ , Xiaolei Nie ₁ , Wenyu Zhao _{1,

2} , Qingjie Zhang ₁

Affiliation

Ni 金属已广泛用作 Bi ₂ Te ₃基热电器件中的阻挡层，其建立稳定的接头以连接 Bi ₂ Te ₃基腿和电极。然而，当器件暴露在高温下时，Ni/Bi ₂ Te _{3接头变得非常脆弱，导致性能严重下降甚至器件失效。}_{在此，通过在 Bi 2} Te ₃基合金上电弧喷涂 Ni 阻挡层，建立了稳定的 Ni/ Bi ₂ Te ₃接头。电弧喷涂Ni/Bi的界面微观结构和接触性能，包括结合强度和接触电阻率研究了_{2 个}Te _3接头。结果表明，与传统的Ni/Bi ₂ Te ₃接头相比，电弧喷涂的Ni/Bi ₂ Te ₃接头具有相对较低的接触电阻率，同时具有高出50%的结合强度。由于暴露在高温环境下会使接头老化，电弧喷涂的 Ni/Bi ₂ Te ₃接头表现出更好的热冲击耐受性，具有稳定的结合强度和接触电阻率。增强的界面接触性能和耐热性应归因于具有良好欧姆接触的厚镍阻挡层和界面反应层。这项工作提供了一种有效的策略，可以为 Bi ₂ Te ₃基热电器件建立稳定的接头，提高热稳定性。

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Enhanced Contact Performance and Thermal Tolerance of Ni/Bi2Te3 Joints for Bi2Te3-Based Thermoelectric Devices

Ni metal has been widely used as a barrier layer in Bi₂Te₃-based thermoelectric devices, which establishes stable joints to link Bi₂Te₃-based legs and electrodes. However, the Ni/Bi₂Te₃ joints become very fragile when the devices were exposed to high temperature, causing severe performance deterioration and even device failure. Herein, stable Ni/Bi₂Te₃ joints have been established by arc spraying of the Ni barrier layer on the Bi₂Te₃-based alloys. The interface microstructure and contact performance including the bonding strength and contact resistivity of the arc-sprayed Ni/Bi₂Te₃ joints are investigated. The results indicate that, as compared with traditional Ni/Bi₂Te₃ joints, the arc-sprayed Ni/Bi₂Te₃ joints have comparably low contact resistivity while possessing a 50% higher bonding strength. Aging the joints as an exposure to high-temperature circumstances, the arc-sprayed Ni/Bi₂Te₃ joints exhibit much better tolerance to the thermal shock with stable bonding strength and contact resistivity. The enhanced interfacial contact performance and thermal tolerance should be attributed to the thick Ni barrier layer and interface reaction layer with good Ohmic contact. This work provides an effective strategy to establish stable joints for the Bi₂Te₃-based thermoelectric devices with improved thermal stability.

更新日期：2023-05-01

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