基于 HfZrO2/β-Ga2O3 异质结的高性能自驱动日盲紫外光电探测器,ACS Applied Materials & Interfaces

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基于 HfZrO2/β-Ga2O3 异质结的高性能自驱动日盲紫外光电探测器
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-04-28 , DOI: 10.1021/acsami.3c02209
Shuang Yan ₁ , Gaochen Yang ₁ , Huanfeng He ₁ , Qi Liu ₁ , Qingqi Peng ₁ , Jian Chen ₁ , Mingkai Li ₁ , Yinmei Lu ₁ , Yunbin He ₁

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Ga ₂ O ₃是一种宽带隙半导体，在日盲紫外（UV）光电探测器中显示出巨大的应用潜力。_{然而，基于Ga 2} O ₃的自驱动日盲紫外光电探测器的响应度和探测度由于器件中光生载流子的分离有限，目前无法满足实际应用。在这项工作中，通过结合铁电体Hf _0.5 Zr _0.5 O ₂ / _β_- Ga ₂_O 3_异质结自驱动日盲紫外光电探测器（HfZrO_{2 ) Ga}₂ O ₃材料，利用HfZrO ₂的超宽带隙和两者之间有利的II型能带构型。经过优化，HfZrO _{2层厚度为 10 nm 的基于 HfZrO}₂ /β-Ga ₂ O ₃异质结的 UV 光电探测器被证明可提供显着的响应度 ( R = (14.64 ± 0.3) mA/W) 和检测率 ( D * = (1.58 ± 0.03) × 10 ¹² Jones)，远优于单个 Ga ₂ O ₃基于 240 nm 光照的设备。_{此外，由于 HfZrO 2}中的铁电去极化电场与 HfZrO 2 / 处的内建_电场的相长耦合，器件性能可随HfZrO ₂的不同极化状态进行调节，并在向上极化状态下显示出显着增强。 β-Ga ₂ O ₃界面。^{在0.19 μW/cm 2}的弱光照射下，向上极化的器件显示出显着增强的R (52.6 mA/W) 和D * (5.7 × 10 ¹² Jones) 值。我们设备的性能超过了大多数先前报道的 Ga ₂基于O ₃的自驱动光电探测器，表明其在敏感的日盲紫外探测的实际应用中具有巨大潜力。

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High-Performance Self-Driven Solar-Blind Ultraviolet Photodetectors Based on HfZrO2/β-Ga2O3 Heterojunctions

Ga₂O₃ is a wide-bandgap semiconductor that has shown great potential for application in solar-blind ultraviolet (UV) photodetectors. However, the responsivity and detectivity of Ga₂O₃-based self-driven solar-blind UV photodetectors are insufficient for practical applications at present because of the limited separation of photogenerated carriers in the devices. In this work, Hf_0.5Zr_0.5O₂/β-Ga₂O₃ heterojunction-based self-driven solar-blind UV photodetectors are constructed by combining ferroelectric Hf_0.5Zr_0.5O₂ (HfZrO₂) material with Ga₂O₃, taking advantage of the ultrawide bandgap of HfZrO₂ and the favorable II-type energy band configuration between both. Upon optimization, a HfZrO₂/β-Ga₂O₃ heterojunction-based UV photodetector with a HfZrO₂ layer thickness of 10 nm is shown to provide remarkable responsivity (R = (14.64 ± 0.3) mA/W) and detectivity (D* = (1.58 ± 0.03) × 10¹² Jones), which are much superior to those of a single Ga₂O₃-based device toward 240 nm light illumination. Further, the device performance is adjustable with varying poling states of HfZrO₂ and shows substantial enhancement in the upward poling state, benefiting from the constructive coupling of the ferroelectric depolarization electric field in HfZrO₂ and the built-in electric field at the HfZrO₂/β-Ga₂O₃ interface. Under illumination of weak light of 0.19 μW/cm², the upward poled device shows significantly enhanced R (52.6 mA/W) and D* (5.7 × 10¹² Jones) values. The performance of our device surpasses those of most previously reported Ga₂O₃-based self-driven photodetectors, indicating its great potential in practical applications for sensitive solar-blind UV detection.

更新日期：2023-04-28

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