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Excellent Energy-Storage Performance of (0.85 – x)NaNbO3–xNaSbO3–0.15(Na0.5La0.5)TiO3 Antiferroelectric Ceramics through B-Site Sb5+ Driven Phase Transition
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-04-26 , DOI: 10.1021/acsami.3c03296 Aiwen Xie 1 , Jun Chen 2 , Jianan Zuo 3 , Juan Liu 3 , Tianyu Li 1 , Xuewen Jiang 1 , Ruzhong Zuo 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2023-04-26 , DOI: 10.1021/acsami.3c03296 Aiwen Xie 1 , Jun Chen 2 , Jianan Zuo 3 , Juan Liu 3 , Tianyu Li 1 , Xuewen Jiang 1 , Ruzhong Zuo 1
Affiliation
NaNbO3-based relaxor antiferroelectric (AFE) ceramics are receiving more and more attention for high power pulse applications. A commonly used design strategy is to add complex perovskites with lower tolerance factors. Herein, a new lead-free AFE system of (0.85 – x)NaNbO3–xNaSbO3–0.15(Na0.5La0.5)TiO3 was specially designed considering the substitution of Sb5+ for Nb5+ reduces the polarizability of B-site ions but increases the tolerance factor. The formation of nanodomains with stable AFE orthorhombic R phase symmetry contributes to a slim and double-like polarization-field hysteresis loop, while the increased resistivity and activation energy as a result of sintering aids lead to an enhanced breakdown strength. Therefore, an excellent energy density Wrec ≈ 6.05 J/cm3, a high energy efficiency η ≈ 80.5%, and good charge–discharge performances (power density PD ≈ 155 MW/cm3 and discharging rate t0.9 ≈ 44.6 ns) were achieved in MnO2-doped x = 0.03 ceramics. The experimental results demonstrate that the B-site Sb5+ driven orthorhombic P–R phase transition and increased local structure disorder should provide a new strategy to design high-performance NaNbO3-based relaxor AFE capacitors.
中文翻译:
(0.85 – x)NaNbO3–xNaSbO3–0.15(Na0.5La0.5)TiO3 反铁电陶瓷通过 B 位 Sb5+ 驱动的相变实现优异的储能性能
基于NaNbO 3的弛豫反铁电 (AFE) 陶瓷在高功率脉冲应用中受到越来越多的关注。一种常用的设计策略是添加具有较低公差因子的复杂钙钛矿。在此,考虑到用 Sb 5+替代Nb 5+ ,专门设计了 (0.85 – x )NaNbO 3 – x NaSbO 3 –0.15(Na 0.5 La 0.5 )TiO 3的新型无铅 AFE 系统降低了 B 位离子的极化率,但增加了容差因子。具有稳定 AFE 正交 R 相对称性的纳米域的形成有助于形成细长的双极化场磁滞回线,而烧结助剂导致的电阻率和活化能增加导致击穿强度增强。因此,优异的能量密度W rec ≈ 6.05 J/cm 3,高能量效率η ≈ 80.5%,以及良好的充放电性能(功率密度P D ≈ 155 MW/cm 3和放电速率t 0.9 ≈ 44.6 ns)在 MnO 2掺杂的x中实现= 0.03 陶瓷。实验结果表明,B 位 Sb 5+驱动的正交 P-R 相变和增加的局部结构无序应为设计高性能 NaNbO 3基弛豫 AFE 电容器提供新策略。
更新日期:2023-04-26
中文翻译:
(0.85 – x)NaNbO3–xNaSbO3–0.15(Na0.5La0.5)TiO3 反铁电陶瓷通过 B 位 Sb5+ 驱动的相变实现优异的储能性能
基于NaNbO 3的弛豫反铁电 (AFE) 陶瓷在高功率脉冲应用中受到越来越多的关注。一种常用的设计策略是添加具有较低公差因子的复杂钙钛矿。在此,考虑到用 Sb 5+替代Nb 5+ ,专门设计了 (0.85 – x )NaNbO 3 – x NaSbO 3 –0.15(Na 0.5 La 0.5 )TiO 3的新型无铅 AFE 系统降低了 B 位离子的极化率,但增加了容差因子。具有稳定 AFE 正交 R 相对称性的纳米域的形成有助于形成细长的双极化场磁滞回线,而烧结助剂导致的电阻率和活化能增加导致击穿强度增强。因此,优异的能量密度W rec ≈ 6.05 J/cm 3,高能量效率η ≈ 80.5%,以及良好的充放电性能(功率密度P D ≈ 155 MW/cm 3和放电速率t 0.9 ≈ 44.6 ns)在 MnO 2掺杂的x中实现= 0.03 陶瓷。实验结果表明,B 位 Sb 5+驱动的正交 P-R 相变和增加的局部结构无序应为设计高性能 NaNbO 3基弛豫 AFE 电容器提供新策略。