Highly efficient visible light excitation and generating high photogenerated charges in semiconductor electrodes yet challenging in photoelectrochemical (PEC) water splitting. Herein, dual heterojunctions comprising of WO₃/Bi₂WO₆ 2D nanoflakes surrounded by In₂S₃ nanosphere photo absorbers used as a photoelectrodes. Under visible light irradiation, the WO₃/Bi₂WO₆/In₂S₃ photoelectrode produced an excellent low overpotential-photocurrent. The photocurrent density of 4.02 mA/cm² at 0.84 V vs. RHE was achieved for a heterostructure photoanode and 8-fold higher than WO₃ photoanode. The incident photon to the current conversion efficiency of WO₃/Bi₂WO₆/In₂S₃ (52% at 400 nm) is about 8 fold higher that of WO₃. The improved hydrogen evolution performance was attained through hindering recombination and better band alignment between In₂S₃ and Bi₂WO₆. The low charge transfer resistance (152.8 Ohm) of WO₃/Bi₂WO₆/In₂S₃ photoanode substantially improves the surface charge separation through In₂S₃ photoactivated catalytic sites. The WO₃/Bi₂WO₆/In₂S₃ photoanode demonstrates an outstanding charge carriers lifetime, resulting in a maximum photocurrent density of 4.02 mA/cm² for stable water splitting applications.

高效可见光激发并在半导体电极中产生高光生电荷，但在光电化学 (PEC) 水分解中具有挑战性。在此，包含被 In ₂ S ₃纳米球光吸收剂包围的 WO ₃ /Bi ₂ WO ₆ 2D 纳米薄片的双异质结用作光电极。在可见光照射下，WO ₃ /Bi ₂ WO ₆ /In ₂ S ₃光电极产生了优异的低过电势-光电流。^{4.02 mA/cm 2}的光电流密度_{异质结构光电阳极的电压为 0.84 V vs. RHE，比 WO 3}光电阳极高 8 倍。_{WO 3} /Bi ₂ WO ₆ /In ₂ S ₃的入射光子到电流的转换效率（在400nm处为52%）比WO ₃高约8倍。_{通过阻碍 In 2} S ₃和 Bi ₂ WO ₆之间的重组和更好的带排列，实现了改进的析氢性能。_{WO 3} /Bi ₂ WO ₆ /In ₂ S ₃的低电荷转移电阻（152.8 Ohm）_{光电阳极通过 In 2} S ₃光活化催化位点显着改善表面电荷分离。WO ₃ /Bi ₂ WO ₆ /In ₂ S ₃光电阳极展示了出色的载流子寿命，导致稳定的水分解应用的最大光电流密度为 4.02 mA/cm ²。