无定形和纹理 Co1–xSix 半金属薄膜中无序诱导的磁传输异常,ACS Applied Electronic Materials

当前位置： X-MOL 学术 › ACS Appl. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

无定形和纹理 Co1–xSix 半金属薄膜中无序诱导的磁传输异常
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-04-25 , DOI: 10.1021/acsaelm.3c00095
Alan Molinari ₁ , Federico Balduini ₁ , Lorenzo Rocchino ₁ , Rafał Wawrzyńczak ₂ , Marilyne Sousa ₁ , Holt Bui ₃ , Christian Lavoie ₄ , Vesna Stanic ₄ , Jean Jordan-Sweet ₄ , Marinus Hopstaken ₄ , Serguei Tchoumakov ₅ , Selma Franca ₅ , Johannes Gooth ₂ , Simone Fratini ₅ , Adolfo G Grushin ₅ , Cezar Zota ₁ , Bernd Gotsmann ₁ , Heinz Schmid ₁

Affiliation

近年来，手性半金属单硅化钴 (CoSi) 已成为一种原型、近乎理想的拓扑导体，具有巨大的拓扑保护费米弧。已经在 CoSi 块状单晶中确定了奇特的拓扑量子特性。然而，CoSi 也因容易出现内在无序和不均匀性而闻名，尽管有拓扑保护，但仍有可能危及其拓扑传输特性。或者，拓扑可以通过无序来稳定，这表明拓扑金属的无定形变体的诱人可能性尚未被发现。在这方面，了解微观结构和化学计量如何影响磁传输特性至关重要，特别是在低维 CoSi 薄膜和器件的情况下。_{1– x} Si _x薄膜生长在 MgO 基板上，具有受控的薄膜微观结构（非晶与纹理）和化学成分 (0.40 < x < 0.60)。_{Co 1– x} Si _x薄膜的电阻率对薄膜微观结构几乎不敏感，并呈现出从类金属 (dρ _xx /d T > 0) 到类半导体 (dρ _xx /d T< 0) 硅含量增加时的传导状态。磁传输特性的各种异常，包括例如与量子局域化和电子-电子相互作用一致的特征、异常霍尔效应和近藤效应，以及磁交换相互作用的发生，都归因于内在结构和化学无序的显着影响。我们的系统调查引起了人们对在纳米级薄膜和器件中拓扑手性半金属 CoSi 的前瞻性开发所涉及的复杂性和挑战的关注。

"点击查看英文标题和摘要"

Disorder-Induced Magnetotransport Anomalies in Amorphous and Textured Co1–xSix Semimetal Thin Films

In recent times the chiral semimetal cobalt monosilicide (CoSi) has emerged as a prototypical, nearly ideal topological conductor hosting giant, topologically protected Fermi arcs. Exotic topological quantum properties have already been identified in CoSi bulk single crystals. However, CoSi is also known for being prone to intrinsic disorder and inhomogeneities, which, despite topological protection, risk jeopardizing its topological transport features. Alternatively, topology may be stabilized by disorder, suggesting the tantalizing possibility of an amorphous variant of a topological metal, yet to be discovered. In this respect, understanding how microstructure and stoichiometry affect magnetotransport properties is of pivotal importance, particularly in case of low-dimensional CoSi thin films and devices. Here we comprehensively investigate the magnetotransport and magnetic properties of ≈25 nm Co_1–xSi_x thin films grown on a MgO substrate with controlled film microstructure (amorphous vs textured) and chemical composition (0.40 < x < 0.60). The resistivity of Co_1–xSi_x thin films is nearly insensitive to the film microstructure and displays a progressive evolution from metallic-like (dρ_xx/dT > 0) to semiconducting-like (dρ_xx/dT < 0) regimes of conduction upon increasing the silicon content. A variety of anomalies in the magnetotransport properties, comprising for instance signatures consistent with quantum localization and electron–electron interactions, anomalous Hall and Kondo effects, and the occurrence of magnetic exchange interactions, are attributable to the prominent influence of intrinsic structural and chemical disorder. Our systematic survey brings to attention the complexity and the challenges involved in the prospective exploitation of the topological chiral semimetal CoSi in nanoscale thin films and devices.

更新日期：2023-04-25

点击分享查看原文

点击收藏

公开下载

阅读更多本刊新发论文本刊介绍/投稿指南