Herein, atomic layer deposition (ALD)-Al₂O₃ films were applied as a medium to modulate the electronic states of the supported Pt. Based on the sacrificial template of ZIF-67, the ternary Co₃O₄/Pt/Al₂O₃ catalyst exhibited better performance in catalytic CO oxidation than the binary Co₃O₄/Pt catalyst. Both experimental and calculation results indicate the existence of charge transport between the Pt and the ALD-Al₂O₃ films, leading to electron-rich Pt, enhanced O₂ affinity, and reduced activation energy. Interestingly, the oxidation resistance of Pt nanoparticles was visualized when annealing Co₃O₄/Pt/Al₂O₃ catalyst at high temperatures. Mechanism studies indicate the typical LH mechanism occurred in CO oxidation, showing that the co-adsorbed CO and O₂ could be converted to carbonate-type *OCOO intermediates via low energy barriers. At low temperatures, CO₂ was mainly produced by the lattice oxygen-mediated M-vK mechanism based on isotope labeling experiments. Our findings provide an alternative way to regulate the electronic states of noble metals by the ALD technique.

在此，应用原子层沉积 (ALD)-Al ₂ O _{3膜作为介质来调节负载的 Pt 的电子态。}基于ZIF-67的牺牲模板，三元Co ₃ O ₄ /Pt/Al ₂ O ₃催化剂表现出比二元Co ₃ O ₄ /Pt催化剂更好的催化CO氧化性能。_{实验和计算结果均表明 Pt 和 ALD-Al 2} O ₃薄膜之间存在电荷传输，导致富电子的 Pt、增强的 O ₂亲和力和降低的活化能。有趣的是，当在高温下退火 Co ₃ O ₄ /Pt/Al ₂ O _3催化剂时，Pt 纳米粒子的抗氧化性显现出来。机理研究表明典型的 LH 机理发生在 CO 氧化过程中，表明共吸附的 CO 和 O ₂可以通过低能垒转化为碳酸盐型 *OCOO 中间体。在低温下，CO ₂主要通过基于同位素标记实验的晶格氧介导的M-vK机制产生。我们的研究结果提供了另一种通过 ALD 技术调节贵金属电子状态的方法。