Two-dimensional (2D) metal-free ferromagnetic materials are ideal candidates to fabricate next-generation memory and logic devices, but optimization of their ferromagnetism at atomic-scale remains challenging. Theoretically, optimization of ferromagnetism could be achieved by inducing long-range magnetic sequence, which requires short-range exchange interactions. In this work, we propose a strategy to enhance the ferromagnetism of 2D graphite carbon nitride (g-C₃N₄), which is facilitating the short-range exchange interaction by introducing in-planar boron bridges. As expected, the ferromagnetism of g-C₃N₄ was significantly enhanced after the introduction of boron bridges, consistent with theoretical calculations. Overall, boosting ferromagnetism of 2D materials by introducing bridging groups is emphasized, which could be applied to manipulate the magnetism of other materials.

二维 (2D) 无金属铁磁材料是制造下一代存储器和逻辑设备的理想候选材料，但在原子尺度上优化其铁磁性仍然具有挑战性。从理论上讲，铁磁性的优化可以通过诱导长程磁序列来实现，这需要短程交换相互作用。在这项工作中，我们提出了一种增强二维石墨碳氮化物 (gC ₃ N ₄ ) 铁磁性的策略，该策略通过引入平面内硼桥促进短程交换相互作用。_{正如预期的那样，gC 3} N ₄的铁磁性在引入硼桥后显着增强，与理论计算一致。总的来说，强调了通过引入桥接基团来增强二维材料的铁磁性，这可以应用于控制其他材料的磁性。