Thermoelectric Performance of Surface-Engineered Cu1.5–xTe–Cu2Se Nanocomposites,ACS Nano

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Thermoelectric Performance of Surface-Engineered Cu1.5–xTe–Cu2Se Nanocomposites
ACS Nano ( IF 15.8 ) Pub Date : 2023-04-18 , DOI: 10.1021/acsnano.3c00495
Congcong Xing _{1,

2} , Yu Zhang _{1,

2} , Ke Xiao _{1,

3} , Xu Han ₄ , Yu Liu ₅ , Bingfei Nan _{1,

3} , Maria Garcia Ramon _{1,

6} , Khak Ho Lim ₇ , Junshan Li ₈ , Jordi Arbiol _{4,

9} , Bed Poudel ₂ , Amin Nozariasbmarz ₂ , Wenjie Li ₂ , Maria Ibáñez ₆ , Andreu Cabot _{1,

9}

Affiliation

Cu_2–xS and Cu_2–xSe have recently been reported as promising thermoelectric (TE) materials for medium-temperature applications. In contrast, Cu_2–xTe, another member of the copper chalcogenide family, typically exhibits low Seebeck coefficients that limit its potential to achieve a superior thermoelectric figure of merit, zT, particularly in the low-temperature range where this material could be effective. To address this, we investigated the TE performance of Cu_1.5–xTe–Cu₂Se nanocomposites by consolidating surface-engineered Cu_1.5Te nanocrystals. This surface engineering strategy allows for precise adjustment of Cu/Te ratios and results in a reversible phase transition at around 600 K in Cu_1.5–xTe–Cu₂Se nanocomposites, as systematically confirmed by in situ high-temperature X-ray diffraction combined with differential scanning calorimetry analysis. The phase transition leads to a conversion from metallic-like to semiconducting-like TE properties. Additionally, a layer of Cu₂Se generated around Cu_1.5–xTe nanoparticles effectively inhibits Cu_1.5–xTe grain growth, minimizing thermal conductivity and decreasing hole concentration. These properties indicate that copper telluride based compounds have a promising thermoelectric potential, translated into a high dimensionless zT of 1.3 at 560 K.

中文翻译：

表面工程化 Cu1.5–xTe–Cu2Se 纳米复合材料的热电性能

Cu _{2– x} S 和 Cu _{2– x} Se 最近被报道为用于中温应用的有前途的热电 (TE) 材料。相比之下，铜硫族化物家族的另一个成员Cu _{2– x} Te 通常表现出较低的塞贝克系数，这限制了其实现卓越热电品质因数zT的潜力，特别是在该材料可能有效的低温范围内. 为了解决这个问题，我们通过整合表面工程化的 Cu _{1.5研究了 Cu}_{1.5– x} Te–Cu ₂ Se 纳米复合材料的 TE 性能纳米晶体。_{这种表面工程策略允许精确调整 Cu/Te 比率，并在 Cu 1.5– x} Te–Cu ₂ Se 纳米复合材料中导致 600 K 左右的可逆相变，这通过原位高温 X 射线衍射结合系统地证实用差示扫描量热法分析。相变导致从类似金属的 TE 特性转变为类似半导体的 TE 特性。_{此外，在 Cu 1.5–}_x Te 纳米颗粒周围生成的一层 Cu ₂ Se可有效抑制 Cu _1.5–_xTe 晶粒生长，最小化热导率并降低空穴浓度。这些特性表明基于碲化铜的化合物具有很有前途的热电势，在 560 K 下转化为 1.3 的高无量纲zT 。

更新日期：2023-04-18

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