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Tetrabutylammonium Bromide Functionalized Ti3C2Tx MXene as Versatile Cathode Buffer Layer for Efficient and Stable Inverted Perovskite Solar Cells
Advanced Functional Materials ( IF 18.5 ) Pub Date : 2023-04-17 , DOI: 10.1002/adfm.202300113
Ping Cai 1 , Ling Ding 1 , Ziming Chen 2 , Dianhui Wang 1 , Hongliang Peng 1 , Changlai Yuan 1 , Chaohao Hu 1 , Lixian Sun 1 , Yuriy N. Luponosov 3 , Fei Huang 2 , Qifan Xue 2
Affiliation  

2D Ti3C2Tx MXene, possessing facile preparation, high electrical conductivity, flexibility, and solution processability, shows good application potential for enhancing device performance of perovskite solar cells (PVSCs). In this study, tetrabutylammonium bromide functionalized Ti3C2Tx (TBAB-Ti3C2Tx) is developed as cathode buffer layer (CBL) to regulate the PCBM/Ag cathode interfacial property for the first time. By virtue of the charge transfer from TBAB to Ti3C2Tx demonstrated by electron paramagnetic resonance and density functional theory, the TBAB-Ti3C2Tx CBL with high electrical conductivity exhibits significantly reduced work function of 3.9 eV, which enables optimization of energy level alignment and enhancement of charge extraction. Moreover, the TBAB-Ti3C2Tx CBL can effectively inhibit the migration of iodine ions from perovskite layer to Ag cathode, which synergistically suppresses defect states and reduce charge recombination. Consequently, utilizing MAPbI3 perovskite without post-treatment, the TBAB-Ti3C2Tx based device exhibits a dramatically improved power conversion efficiency of 21.65% with significantly improved operational stability, which is one of the best efficiencies reported for the devices based on MAPbI3/PCBM with different CBLs. These results indicate that TBAB-Ti3C2Tx shall be a promising CBL for high-performance inverted PVSCs and inspire the further applications of quaternary ammonium functionalized MXenes in PVSCs.

中文翻译:

四丁基溴化铵功能化 Ti3C2TX MXene 作为高效稳定的倒置钙钛矿太阳能电池的多功能阴极缓冲层

2D Ti 3 C 2 T x MXene具有易于制备、高导电性、灵活性和溶液加工性,在提高钙钛矿太阳能电池(PVSC)的器件性能方面显示出良好的应用潜力。在这项研究中,首次开发了四丁基溴化铵功能化Ti 3 C 2 T x (TBAB-Ti 3 C 2 T x )作为阴极缓冲层(CBL)来调节PCBM/Ag阴极界面性质。凭借从 TBAB 到 Ti 3 C 2 T x的电荷转移通过电子顺磁共振和密度泛函理论证明,具有高电导率的TBAB-Ti 3 C 2 T x CBL的功函数显着降低至3.9 eV,这使得能够优化能级排列并增强电荷提取。此外,TBAB-Ti 3 C 2 T x CBL可以有效抑制碘离子从钙钛矿层迁移到Ag阴极,从而协同抑制缺陷态并减少电荷复合。因此,利用 MAPbI 3钙钛矿而不进行后处理,TBAB-Ti 3 C 2 T x基于 MAPbI 3 /PCBM 的器件的功率转换效率显着提高了 21.65%,并且运行稳定性显着提高,这是基于具有不同 CBL 的 MAPbI 3 /PCBM 的器件报告的最佳效率之一。这些结果表明TBAB-Ti 3 C 2 T x将成为高性能倒置PVSC的有前景的CBL,并激发季铵功能化MXene在PVSC中的进一步应用。
更新日期:2023-04-17
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