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Laser CVD Growth of Uniquely <010>-oriented β-Ga2O3 Films on Quartz Substrate with Ultrafast Photoelectric Response
Small ( IF 13.0 ) Pub Date : 2023-04-14 , DOI: 10.1002/smll.202300154 Rong Tu 1, 2, 3 , Xinyu Li 1, 2 , Qingfang Xu 2 , Tenghua Gao 2 , Xian Zhang 3 , Bao-Wen Li 2 , Song Zhang 1, 2 , Takashi Goto 2, 4 , Lianmeng Zhang 1, 2
Small ( IF 13.0 ) Pub Date : 2023-04-14 , DOI: 10.1002/smll.202300154 Rong Tu 1, 2, 3 , Xinyu Li 1, 2 , Qingfang Xu 2 , Tenghua Gao 2 , Xian Zhang 3 , Bao-Wen Li 2 , Song Zhang 1, 2 , Takashi Goto 2, 4 , Lianmeng Zhang 1, 2
Affiliation
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The oriented growth of β-Ga2O3 films has triggered extensive interest due to the remarkable and complex anisotropy found in the β-Ga2O3 bulks. Remarkable properties, including stronger solar-blind ultraviolet (SBUV) absorption, better mobility, and higher thermal conductivity, are usually observed along <010> direction as compared to other low-index axes. So far, <010>-oriented β-Ga2O3 film growth has been hindered by the lack of suitable substrates and higher surface energy of the (010) crystal plane. Herein, the first growth of uniquely <010>-oriented β-Ga2O3 films on quartz substrates by laser chemical vapor deposition (LCVD) are reported. By investigating the effects of deposition temperature (Tdep) and O2 flow rate (RO2) on the growth of β-Ga2O3 films, it is found that the formation of <010> orientation is closely related to the higher stability of oxygen close-packed planes under O-rich condition. As a result, a grain size of up to ≈2 µm and a deposition rate of up to ≈ 40 µm h−1 are obtained. Metal-semiconductor-metal (MSM) type detector based on <010>-oriented β-Ga2O3 film exhibits ultra-fast response speed, 1–2 orders of magnitude higher than those of most detectors based on β-Ga2O3 films with other orientations.
中文翻译：
具有超快光电响应的石英基底上独特<010>取向β-Ga2O3薄膜的激光CVD生长
由于β-Ga 2 O 3块体中发现的显着且复杂的各向异性，β-Ga 2 O 3薄膜的定向生长引起了广泛的兴趣。与其他低折射率轴相比，通常沿 <010> 方向观察到显着的特性，包括更强的日盲紫外线 (SBUV) 吸收、更好的迁移率和更高的导热率。迄今为止，由于缺乏合适的衬底和(010)晶面较高的表面能， <010>取向的β-Ga 2 O 3薄膜的生长受到阻碍。在此，报道了通过激光化学气相沉积（LCVD）在石英衬底上首次生长独特<010>取向的β-Ga 2 O 3薄膜。通过研究沉积温度( T dep )和O 2流量( R O2 )对β-Ga 2 O 3薄膜生长的影响，发现<010>取向的形成与较高的稳定性密切相关。富氧条件下的氧气密排飞机。结果，获得了高达约2μm的晶粒尺寸和高达约40μm h -1的沉积速率。基于<010>取向β-Ga 2 O 3薄膜的金属-半导体-金属（MSM）型探测器具有超快的响应速度，比大多数基于β-Ga 2 O的探测器高1~2个数量级3部其他方向的电影。
更新日期：2023-04-14
中文翻译：
具有超快光电响应的石英基底上独特<010>取向β-Ga2O3薄膜的激光CVD生长
由于β-Ga 2 O 3块体中发现的显着且复杂的各向异性，β-Ga 2 O 3薄膜的定向生长引起了广泛的兴趣。与其他低折射率轴相比，通常沿 <010> 方向观察到显着的特性，包括更强的日盲紫外线 (SBUV) 吸收、更好的迁移率和更高的导热率。迄今为止，由于缺乏合适的衬底和(010)晶面较高的表面能， <010>取向的β-Ga 2 O 3薄膜的生长受到阻碍。在此，报道了通过激光化学气相沉积（LCVD）在石英衬底上首次生长独特<010>取向的β-Ga 2 O 3薄膜。通过研究沉积温度( T dep )和O 2流量( R O2 )对β-Ga 2 O 3薄膜生长的影响，发现<010>取向的形成与较高的稳定性密切相关。富氧条件下的氧气密排飞机。结果，获得了高达约2μm的晶粒尺寸和高达约40μm h -1的沉积速率。基于<010>取向β-Ga 2 O 3薄膜的金属-半导体-金属（MSM）型探测器具有超快的响应速度，比大多数基于β-Ga 2 O的探测器高1~2个数量级3部其他方向的电影。
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