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A new dithieno[3,2-b:2′,3′-d]thiophene derivative for high performance single crystal organic field-effect transistors and UV-sensitive phototransistors
RSC Advances ( IF 3.9 ) Pub Date : 2023-04-14 , DOI: 10.1039/d3ra00600j
Yunpeng Lou 1 , Rui Shi 1 , Li Yu 1 , Ting Jiang 1 , Haoquan Zhang 1 , Lifeng Zhang 2 , Yongxu Hu 1 , Deyang Ji 1 , Yajing Sun 3 , Jie Li 1 , Liqiang Li 1, 4 , Wenping Hu 3, 4
Affiliation  

Organic phototransistors (OPTs), as the basic unit for organic image sensors, are emerging as one of the most promising light signal detectors. High performance UV-sensitive phototransistors are highly desired for the detection of UV light. Herein, by introducing the anthracene group to the 2,6-positions of dithieno[3,2-b:2′,3′-d]thiophene, we designed and synthesized a new dithieno[3,2-b:2′,3′-d]thiophene derivative, 2,6-di(anthracen-2-yl)dithieno[3,2-b:2′,3′-d]thiophene (2,6-DADTT). The single crystal structure of 2,6-DADTT presents classical herringbone packing with multiple intermolecular interactions, including S⋯S (3.470 Å), S⋯C (3.304 Å, 3.391 Å, 3.394 Å) and C–H⋯π (2.763 Å, 2.822 Å, 2.846 Å, 2.865 Å, 2.885 Å, 2.890 Å) contacts. Single crystal organic field-effect transistors (SC-OFETs) based on 2,6-DADTT reach a highest mobility of 1.26 cm2 V−1 s−1 and an average mobility of 0.706 cm2 V−1 s−1. 2,6-DADTT-based single crystal organic phototransistors (OPTs) demonstrate photosensitivity (P) of 2.49 × 106, photoresponsivity (R) of 6.84 × 103 A W−1 and ultrahigh detectivity (D*) of 4.70 × 1016 Jones to UV light, which are among the best figures of merit for UV-sensitive OPTs. These excellent comprehensive performances indicate its good application prospects in integrated optoelectronics.

中文翻译:

一种新型二噻吩并[3,2-b:2′,3′-d]噻吩衍生物,用于高性能单晶有机场效应晶体管和紫外敏感光电晶体管

有机光电晶体管(OPT)作为有机图像传感器的基本单元,正在成为最有前途的光信号探测器之一。紫外光检测非常需要高性能紫外敏感光电晶体管。在此,我们通过将蒽基引入二噻吩并[3,2- b :2',3'- d ]噻吩的2,6位,设计并合成了一种新的二噻吩并[3,2- b :2', 3'- d ]噻吩衍生物,2,6-二(蒽-2-基)二噻吩并[3,2- b :2',3'- d ]噻吩(2,6-DADTT)。2,6-DADTT的单晶结构呈现经典的人字形堆积,具有多种分子间相互作用,包括S⋯S(3.470 Å)、S⋯C(3.304 Å、3.391 Å、3.394 Å)和C–H⋯π(2.763 Å) 、2.822 埃、2.846 埃、2.865 埃、2.885 埃、2.890 埃)触点。基于2,6-DADTT的单晶有机场效应晶体管(SC-OFET)达到1.26 cm 2 V -1 s -1的最高迁移率和0.706 cm 2 V -1 s -1的平均迁移率。基于2,6-DADTT的单晶有机光电晶体管(OPT)表现出2.49 × 10 6的光敏度( P )、 6.84 × 10 3 AW −1的光响应度(R )和4.70 × 10 16 Jones的超高探测率(D * )紫外线,这是紫外线敏感 OPT 的最佳品质因数之一。这些优异的综合性能预示着其在集成光电子领域良好的应用前景。
更新日期:2023-04-14
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