单层 MoS2 在多步硫化 MoO2 晶体中的成核和生长,ACS Nano

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单层 MoS2 在多步硫化 MoO2 晶体中的成核和生长
ACS Nano ( IF 15.8 ) Pub Date : 2023-04-13 , DOI: 10.1021/acsnano.3c01150
Yeonjoon Jung ₁ , Huije Ryu ₁ , Hangyel Kim ₁ , Donghoon Moon ₁ , Jaewoong Joo ₁ , Seong Chul Hong ₁ , Jinwoo Kim ₁ , Gwan-Hyoung Lee ₁

Affiliation

二维 (2D) 材料及其异质结构有望用于下一代光电子学、自旋电子学、谷电子学和电子学。尽管二维材料的各种生长研究最近取得了进展，但薄片的机械剥离仍然是获得高质量二维材料的最常用方法，因为在二维材料的生长过程中精确控制材料生长和合成单域，以获得所需的形状和质量，具有挑战性。在这里，我们通过硫化刻面单斜 MoO _{2晶体来报告单层 MoS}₂的成核和生长行为。MoS ₂层在 MoO _{2的厚度阶跃处成核}晶体并外延生长，与 MoO ₂表面具有结晶相关性。外延生长的 MoS ₂层在 SiO ₂衬底上向外扩展，形成单层单晶膜，尽管由于多个厚度台阶导致MoO ₂表面上的MoS _{2层多次成核。}_{尽管 MoS 2}的光致发光由于 MoS ₂和金属 MoO ₂之间的有效电荷转移而被淬灭，但延伸到 SiO ₂衬底的MoS ₂显示出高载流子迁移率 (15 cm ² V ^–1 s ^–1_{), 表明可以使用 MoO 2}晶体作为种子和前体生长高质量的单层 MoS _2膜。我们的工作展示了一种使用多面 MoO ₂晶体生长高质量 MoS ₂的方法，并提供了对二维材料在阶梯状表面上的成核和生长的更深入理解。

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Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization

Two-dimensional (2D) materials and their heterostructures are promising for next-generation optoelectronics, spintronics, valleytronics, and electronics. Despite recent progress in various growth studies of 2D materials, mechanical exfoliation of flakes is still the most common method to obtain high-quality 2D materials because precisely controlling material growth and synthesizing a single domain during the growth process of 2D materials, for the desired shape and quality, is challenging. Here, we report the nucleation and growth behaviors of monolayer MoS₂ by sulfurizing a faceted monoclinic MoO₂ crystal. The MoS₂ layers nucleated at the thickness steps of the MoO₂ crystal and grew epitaxially with crystalline correlation to the MoO₂ surface. The epitaxially grown MoS₂ layer expands outwardly on the SiO₂ substrate, resulting in a monolayer single-crystal film, despite multiple nucleations of MoS₂ layers on the MoO₂ surface owing to several thickness steps. Although the photoluminescence of MoS₂ is quenched owing to efficient charge transfer between MoS₂ and metallic MoO₂, the MoS₂ stretched out to the SiO₂ substrate shows a high carrier mobility of (15 cm² V^–1 s^–1), indicating that a high-quality monolayer MoS₂ film can be grown using the MoO₂ crystal as a seed and precursor. Our work shows a method to grow high-quality MoS₂ using a faceted MoO₂ crystal and provides a deeper understanding of the nucleation and growth of 2D materials on a step-like surface.

更新日期：2023-04-13

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