Highly Reproducible Epitaxial Growth of Wafer-Scale Single-Crystal Monolayer MoS2 on Sapphire,Small Methods

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Highly Reproducible Epitaxial Growth of Wafer-Scale Single-Crystal Monolayer MoS2 on Sapphire
Small Methods ( IF 10.7 ) Pub Date : 2023-04-10 , DOI: 10.1002/smtd.202300165
Pengfei Yang _{1,

2} , Fachen Liu ₃ , Xuan Li _{2,

4} , Jingyi Hu _{1,

2} , Fan Zhou _{1,

2} , Lijie Zhu ₁ , Qing Chen _{2,

4} , Peng Gao ₃ , Yanfeng Zhang _{1,

2}

Affiliation

2D semiconducting transition-metal dichalcogenides (TMDs) have attracted considerable attention as channel materials for next-generation transistors. To meet the industry needs, large-scale production of single-crystal monolayer TMDs in highly reproducible and energy-efficient manner is critically significant. Herein, it is reported that the high-reproducible, high-efficient epitaxial growth of wafer-scale monolayer MoS₂ single crystals on the industry-compatible sapphire substrates, by virtue of a deliberately designed “face-to-face” metal-foil-based precursor supply route, carbon-cloth-filter based precursor concentration decay strategy, and the precise optimization of the chalcogenides and metal precursor ratio (i.e., S/Mo ratio). This unique growth design can concurrently guarantee the uniform release, short-distance transport, and moderate deposition of metal precursor on a wafer-scale substrate, affording high-efficient and high-reproducible growth of wafer-scale single crystals (over two inches, six times faster than usual). Moreover, the S/Mo precursor ratio is found as a key factor for the epitaxial growth of MoS₂ single crystals with rather high crystal quality, as convinced by the relatively high electronic performances of related devices. This work demonstrates a reliable route for the batch production of wafer-scale single-crystal 2D materials, thus propelling their practical applications in highly integrated high-performance nanoelectronics and optoelectronics.

中文翻译：

蓝宝石上晶圆级单晶单层 MoS2 的高再现性外延生长

二维半导体过渡金属二硫属化物（TMD）作为下一代晶体管的沟道材料引起了广泛关注。为了满足行业需求，以高重复性和节能的方式大规模生产单晶单层 TMD 至关重要。_{在此，报道了晶圆级单层MoS 2}的高重复性、高效外延生长通过精心设计的“面对面”金属箔基前驱体供应路线、基于碳布过滤器的前驱体浓度衰减策略以及硫属化物的精确优化，在工业兼容的蓝宝石衬底上制备单晶和金属前体比（即S/Mo比）。这种独特的生长设计可以同时保证金属前驱体在晶圆级衬底上的均匀释放、短距离传输和适度沉积，实现晶圆级单晶（超过两英寸、六英寸）的高效、高重复性生长。比平常快几倍）。_{此外，S/Mo前体比被发现是MoS 2}外延生长的关键因素具有较高晶体质量的单晶，相关器件具有较高的电子性能。这项工作展示了批量生产晶圆级单晶二维材料的可靠途径，从而推动了其在高度集成的高性能纳米电子学和光电子学中的实际应用。

更新日期：2023-04-10

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