应变和域工程的大型 MoS2 单层膜中的超高光响应,Journal of Materials Chemistry A

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应变和域工程的大型 MoS2 单层膜中的超高光响应
Journal of Materials Chemistry A ( IF 10.7 ) Pub Date : 2023-04-10 , DOI: 10.1039/d3ta00642e
Ye Seul Jung ₁ , Jae Woo Park _{1,

2} , Ji Yeon Kim ₁ , Youngseo Park ₃ , Dong Gue Roe ₄ , Junseok Heo ₃ , Jeong Ho Cho ₅ , Yong Soo Cho ₁

Affiliation

应变工程已被认为是控制电气和光电特性的关键策略，即使在原子厚度的二维 (2D) 过渡金属二硫化物中也是如此。_{在此，在非常规的厘米级单层 MoS 2}薄膜中探索应变工程和域工程的组合效应以产生超高光响应。用于最大化内置拉伸应变的两步应变工程有利于降低单层 MoS ₂的光学带隙和结处的势垒，从而实现创纪录的性能。_{在 MoS 2}的平面外延结构中，域相对于它们的原子排列的方向调整也促成了非凡的光电探测行为。作为性能亮点，在 +1.80% 的总拉伸应变和域调整的情况下，在 9 × 10 ^-4 mW cm ^-2的入射功率密度下实现了令人印象深刻的 22.9 μA 光电流和 1142 AW -1^的光响应性具有之字形边缘原子阵列，这是迄今为止报道的二维可见光电探测器的最高值。通过实验证据系统地检查了这些增强的起源，包括能带隙的变化和与带对齐相关的估计势垒和额外的极化场。

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Ultrahigh photoresponse in strain- and domain-engineered large-scale MoS2 monolayer films

Strain engineering has been recognized as a critical strategy for controlling electrical and optoelectronic properties, even in atomically thick two-dimensional (2D) transition metal dichalcogenides. Herein, the combined effects of strain engineering and domain engineering are explored in unconventional centimeter-scale monolayer MoS₂ films to generate ultrahigh photoresponses. Two-step strain engineering for maximizing the built-in tensile strain favorably reduced the optical bandgap of monolayer MoS₂ and the potential barriers at junctions, resulting in record performance. Directional adjustments of the domains with respect to their atomic arrangement in the planar epitaxial structure of MoS₂ also contributed to the extraordinary photodetection behavior. As a performance highlight, an impressive photocurrent of 22.9 μA and photoresponsivity of 1142 A W⁻¹ at an incident power density of 9 × 10⁻⁴ mW cm⁻² were achieved in the case of a total tensile strain of +1.80% and domain adjustment with zigzag-edge atomic arrays, which are the highest values reported thus far for 2D visible photodetectors. The origin of these enhancements is systematically examined with experimental evidence, including changes in the energy bandgap and estimated potential barriers associated with band alignments and an additional polarization field.

更新日期：2023-04-10

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