M phase Eu-doped VO₂ powders were prepared by a hydrothermal method followed by post annealing. The semiconductor–metal transition (MIT) properties of the produced samples were studied by Raman spectroscopy, infrared transmittance and resistance measurements. The results indicated that a low dose of Eu doping in VO₂ induces an enhanced switching ability of its infrared transmittance as the MIT occurs, and the ∆T_r is 48% at 1000 cm⁻¹ when the dose of Eu doping is 6%. Moreover, a low dose of Eu doping in VO₂ results a better crystal quality. While a high dose of Eu doping induces enhanced tensile stress in VO₂, resulting in the formation of the M₂ phase of VO₂ at room temperature. These results suggested that Eu is a particularly effective dopant in the synthesis of high-quality M phase VO₂. Thus, Eu doping in VO₂ is a distinctive strategy for realizing M phase VO₂ materials that have extensive applications in the construction of smart window coatings. Possible mechanisms of Eu doping in VO₂ are discussed.

M 相 Eu 掺杂 VO ₂粉末通过水热法制备，然后进行后退火。通过拉曼光谱、红外透射率和电阻测量研究了所生产样品的半导体-金属转变 (MIT) 特性。结果表明，VO ₂中低剂量的Eu掺杂诱导了其红外透射率随MIT发生的增强切换能力，当Eu掺杂剂量为6%时， ΔT _r在1000 cm ^{-1处为48%。}_{此外，VO 2}中低剂量的Eu掺杂导致更好的晶体质量。而高剂量的 Eu 掺杂会导致 VO ₂中的拉伸应力增强，从而导致VO 的M _{2相的形成2}在室温下。这些结果表明，Eu 是合成高质量 M 相 VO ₂中特别有效的掺杂剂。_{因此，在 VO 2}中掺杂 Eu是实现 M 相 VO ₂材料的独特策略，该材料在智能窗涂层的构造中具有广泛的应用。讨论了VO _{2掺杂Eu的可能机制。}