Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications,Nano Letters

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Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications
Nano Letters ( IF 9.6 ) Pub Date : 2023-04-03 , DOI: 10.1021/acs.nanolett.3c00112
Kuan-Yu Chen ₁ , Prabhat K Tripathy ₂ , Kunal Mondal ₃ , Hongliang Zhang ₄ , Adrien Couet ₄ , Joseph B Andrews _{1,

5}

Affiliation

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current–voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10¹⁶ ion/cm² at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

中文翻译：

用于恶劣环境应用的碳化硅纳米线溶液处理肖特基二极管

碳化硅纳米线 (SiC NW) 展现出有前途的特性，允许在恶劣环境中部署可溶液处理的电子产品。通过利用纳米级形式的碳化硅，我们能够将材料分散到液体溶剂中，同时保持块状碳化硅的弹性。这封信报道了 SiC NW 肖特基二极管的制造。每个二极管仅由一根直径约为 160 nm 的纳米线组成。除了分析二极管性能外，还检查了高温和质子辐照对 SiC NW 肖特基二极管电流-电压特性的影响。^{该装置可以在以 10 16}离子/cm ²的注量进行质子照射时保持理想因子、势垒高度和有效理查森常数的相似值在 873 K。因此，这些指标清楚地证明了 SiC NW 的耐高温性和耐辐照性，最终表明它们可以提供在恶劣环境中允许溶液处理电子产品的实用性。

更新日期：2023-04-03

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