State Key Laboratory for Manufacturing Systems Engineering, International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technologies, Xi'an Jiaotong University, Xi'an, 710049 China.
School of Mechanical Engineering, Xi'an Jiaotong University, Xi'an, 710049 China.
Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai, 265503 China.
Xi'an Jiaotong University (Yantai) Research Institute for Intelligent Sensing Technology and System, Xi'an Jiaotong University, Xi'an, China.
HeBei Semiconductor Research Institute, Shijiazhuang, 050051 China.
基于硅的微机电系统 (MEMS) 压力传感器应用广泛,具有小型化和高精度的优点。然而,由于固有的材料限制,它们无法轻易承受超过 150 °C 的高温。在此,我们提出并执行了基于 SiC 的 MEMS 压力传感器的系统全过程研究,该传感器可在 -50 至 300 °C 范围内稳定运行。首先,为了探索非线性压阻效应,4H-SiC 压阻器的电阻温度系数 (TCR) 值是从 -50 到 500 °C 获得的。建立了基于散射理论的电导率变化模型,揭示了非线性变化机制。然后,设计并制作了一种基于 4H-SiC 的压阻式压力传感器。该传感器显示出良好的输出灵敏度 (3.38 mV/V/MPa)、精度 (0. 56% FS) 和 -50 至 300 °C 范围内的低温灵敏度系数 (TCS) (−0.067% FS/°C)。此外,传感器芯片在极端环境中的生存能力通过其在 H 中的抗腐蚀能力得到证明。2 SO 4和NaOH溶液及其在5W X射线下的辐射耐受性。因此,在这项工作中开发的传感器具有很大的潜力来测量高温和极端环境中的压力,例如地热能提取、深井钻探、航空发动机和燃气轮机所面临的压力。
"点击查看英文标题和摘要"
Exploring the nonlinear piezoresistive effect of 4H-SiC and developing MEMS pressure sensors for extreme environments
Microelectromechanical system (MEMS) pressure sensors based on silicon are widely used and offer the benefits of miniaturization and high precision. However, they cannot easily withstand high temperatures exceeding 150 °C because of intrinsic material limits. Herein, we proposed and executed a systematic and full-process study of SiC-based MEMS pressure sensors that operate stably from −50 to 300 °C. First, to explore the nonlinear piezoresistive effect, the temperature coefficient of resistance (TCR) values of 4H-SiC piezoresistors were obtained from −50 to 500 °C. A conductivity variation model based on scattering theory was established to reveal the nonlinear variation mechanism. Then, a piezoresistive pressure sensor based on 4H-SiC was designed and fabricated. The sensor shows good output sensitivity (3.38 mV/V/MPa), accuracy (0.56% FS) and low temperature coefficient of sensitivity (TCS) (−0.067% FS/°C) in the range of −50 to 300 °C. In addition, the survivability of the sensor chip in extreme environments was demonstrated by its anti-corrosion capability in H2SO4 and NaOH solutions and its radiation tolerance under 5 W X-rays. Accordingly, the sensor developed in this work has high potential to measure pressure in high-temperature and extreme environments such as are faced in geothermal energy extraction, deep well drilling, aeroengines and gas turbines.