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Few-Layer Tin Sulfide: A New Black-Phosphorus-Analogue 2D Material with a Sizeable Band Gap, Odd–Even Quantum Confinement Effect, and High Carrier Mobility
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-09-23 00:00:00 , DOI: 10.1021/acs.jpcc.6b06673 Chao Xin 1 , Jiaxin Zheng 1 , Yantao Su 1 , Shuankui Li 1 , Bingkai Zhang 1 , Yancong Feng 1 , Feng Pan 1
The Journal of Physical Chemistry C ( IF 3.3 ) Pub Date : 2016-09-23 00:00:00 , DOI: 10.1021/acs.jpcc.6b06673 Chao Xin 1 , Jiaxin Zheng 1 , Yantao Su 1 , Shuankui Li 1 , Bingkai Zhang 1 , Yancong Feng 1 , Feng Pan 1
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As a compound analogue of black phosphorus, a new 2D semiconductor of SnS layers is proposed. Based on state-of-the-art theoretical calculations, we confirm that such 2D SnS layers are thermally and dynamically stable and can be mechanically exoliated from α-phase SnS bulk materials. The 2D SnS layer has an indirect band gap that can be tuned from 1.96 eV for the monolayer to 1.44 eV for a six-layer structure. Interestingly, the decrease of the band gap with increasing number of layers is not monotonic but shows an odd–even quantum confinement effect, because the interplay of spin–orbit coupling and lack of inversion symmetry in odd-numbered layer structures results in anisotropic spin splitting of the energy bands. It was also found that such 2D SnS layers show high in-plane anisotropy and high carrier mobility (tens of thousands of cm2 V–1 s–1) even superior to that of black phosphorus, which is dominated by electrons. With these intriguing electronic properties, such 2D SnS layers are expected to have great potential for application in future nanoelectronics.
中文翻译：
少层硫化锡：一种新型的黑磷模拟二维材料，具有较大的带隙，奇偶量子限制效应和高载流子迁移率
作为黑磷的化合物类似物，提出了一种新型的SnS层二维半导体。根据最新的理论计算，我们确认此类二维SnS层具有热和动态稳定性，并且可以从α相SnS块体材料中机械剥离。2D SnS层具有间接带隙，可以将其从单层的1.96 eV调整为六层结构的1.44 eV。有趣的是，带隙随着层数的增加而减少不是单调的，而是表现出奇偶量子限制效应，因为奇数层结构中自旋-轨道耦合的相互作用和缺乏反演对称性导致各向异性自旋分裂的能带。还发现此类二维SnS层显示出高的面内各向异性和高的载流子迁移率（几万厘米2 V –1 s –1）甚至优于由电子控制的黑磷。凭借这些引人入胜的电子特性，此类2D SnS层有望在未来的纳米电子学中具有巨大的应用潜力。
更新日期：2016-09-23
中文翻译：
少层硫化锡：一种新型的黑磷模拟二维材料，具有较大的带隙，奇偶量子限制效应和高载流子迁移率
作为黑磷的化合物类似物，提出了一种新型的SnS层二维半导体。根据最新的理论计算，我们确认此类二维SnS层具有热和动态稳定性，并且可以从α相SnS块体材料中机械剥离。2D SnS层具有间接带隙，可以将其从单层的1.96 eV调整为六层结构的1.44 eV。有趣的是，带隙随着层数的增加而减少不是单调的，而是表现出奇偶量子限制效应，因为奇数层结构中自旋-轨道耦合的相互作用和缺乏反演对称性导致各向异性自旋分裂的能带。还发现此类二维SnS层显示出高的面内各向异性和高的载流子迁移率（几万厘米2 V –1 s –1）甚至优于由电子控制的黑磷。凭借这些引人入胜的电子特性，此类2D SnS层有望在未来的纳米电子学中具有巨大的应用潜力。
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