Self-powered photodetectors are recognized as one of the developing trends of next-generation optoelectronic devices. Particularly, a novel photoelectrochemical (PEC) type photodetectors have attracted a great deal of attention due to the advantages of low cost and self-powered capability. Herein, we construct, for the first time, solar-blind PEC-type photodetectors based on amorphous Ga₂O₃-covered β-Ga₂O₃ (denoted as β-Ga₂O₃@a-Ga₂O₃) core−shell nanorod arrays (NRAs) synthesized on silicon substrates using a simple one-step catalyst-free CVD method. The as-fabricated self-powered solar-blind photodetector has comprehensive photodetection performance in terms of a maximum responsivity of 48.4 mA/W, a high detectivity of 8.5 × 10¹¹ Jones as well as fast response and recovery times ($t_{\mathit{res}}$/$t_{\mathit{rec}}$ = 125/160 ms) under 254 nm illumination with a light intensity of 0.1 mW/cm², outperforming most of the reported Ga₂O₃ based PEC-type devices to date. Furthermore, the device shows good multicycle stability and repeatability. Such outstanding solar-blind photodetection performance is largely attributed to the superior crystalline quality of catalyst-free grown β-Ga₂O₃@a-Ga₂O₃ core−shell NRAs and the additional built-in electric field of a-Ga₂O₃ and β-Ga₂O₃ interface. This work provides a simple and feasible route for constructing Ga₂O₃-based PEC-type solar-blind photodetectors with high performance, stability and low cost.

自供电光电探测器被公认为下一代光电器件的发展趋势之一。特别是，新型光电化学（PEC）型光电探测器由于具有低成本和自供电能力等优点而备受关注。在此，我们首次构建了基于非晶Ga ₂ O ₃覆盖的β-Ga ₂ O ₃（表示为β-Ga ₂ O ₃ @a-Ga ₂ O _{3 ）的日盲PEC型光电探测器}) 使用简单的一步无催化剂 CVD 方法在硅基板上合成的核壳纳米棒阵列 (NRA)。所制造的自供电日盲光电探测器在最大响应率为 48.4 mA/W、8.5 × 10 11^琼斯的高探测率以及快速响应和恢复时间方面具有全面的光电探测性能（${吨}_{\mathit{资源}}$/${吨}_{\mathit{记录}}$ = 125/160 ms) 在 254 nm 照明下，光强度为 0.1 mW/cm ² ，优于迄今为止报道的大多数基于 Ga ₂ O _{3的 PEC 型设备。}此外，该装置显示出良好的多循环稳定性和可重复性。如此出色的日盲光电探测性能很大程度上归功于无催化剂生长的 β-Ga ₂ O ₃ @a-Ga ₂ O _{3核壳 NRAs 的优异结晶质量和 a-Ga 2}的额外内置电场O ₃和β-Ga ₂ O ₃界面。_{该工作为构建Ga 2}提供了一条简单可行的路线基于O ₃的PEC型日盲光电探测器具有高性能、稳定性和低成本。