Seeded Growth of AlN Layers on Al- and N-Polar AlN Seeds by the Cu–Al–Ca Solution Growth Method,Physica Status Solidi (A) - Applications and Materials Science

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Seeded Growth of AlN Layers on Al- and N-Polar AlN Seeds by the Cu–Al–Ca Solution Growth Method
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2023-03-30 , DOI: 10.1002/pssa.202300060
Jiafu Han ₁ , Jianli Chen ₁ , Lujie Li ₁ , Yonggui Yu ₁ , Wencheng Ma ₁ , Xiaofang Qi ₁ , Yicheng Wu ₁ , Yongkuan Xu ₁

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Herein, the growth behavior of aluminum nitride (AlN) layers on the Al-polar and N-polar surfaces of AlN seeds is investigated by the Cu–Al–Ca solution growth method. AlN layers with a thickness of 50–60 μm grow on N-polar seeds in 5 h, whereas the thickness of the AlN layer on the Al-polar seeds reaches approximately 35–50 μm. Optical microscopy, X-ray diffraction, high-resolution X-ray diffraction (HRXRD), Raman spectroscopy, and photoluminescence (PL) spectroscopy are performed to investigate the morphology and crystal quality of the grown AlN layers. The N-polar and Al-polar surfaces show hillock growth, which is consistent with the hexagonal structure of AlN. However, the surfaces show differences in terms of hillock size (smaller on the N-polar surface). The HRXRD rocking curves of (002) and (102) show full-width at half-maximum (FWHM) values of 160.25 and 33.53 arcsec, respectively. From Raman analysis, the FWHM values of the AlN layers on the N-polar and Al-polar seeds are 6.1 and 10.6 cm⁻¹, respectively. The PL results show 310, 460, and 590 nm emission peaks of the AlN layer, which may be caused by oxygen impurity and V_N (nitrogen vacancy) and Al_i (aluminum gap).

中文翻译：

通过 Cu-Al-Ca 溶液生长方法在 Al 和 N 极性 AlN 种子上生长 AlN 层

在此，通过 Cu-Al-Ca 溶液生长方法研究了 AlN 种子的 Al 极性和 N 极性表面上氮化铝 (AlN) 层的生长行为。5小时内，N极种子上生长出厚度为50-60μm的AlN层，而Al极种子上的AlN层厚度达到约35-50μm。采用光学显微镜、X 射线衍射、高分辨率 X 射线衍射 (HRXRD)、拉曼光谱和光致发光 (PL) 光谱来研究生长的 AlN 层的形貌和晶体质量。N极和Al极表面呈现小丘状生长，这与AlN的六方结构一致。然而，表面在小丘尺寸方面表现出差异（N 极表面较小）。(002) 和 (102) 的 HRXRD 摇摆曲线显示半峰全宽 (FWHM) 值分别为 160.25 和 33.53 角秒。根据拉曼分析，N极和Al极种子上AlN层的FWHM值为6.1和10.6 cm^分别为-1。PL结果显示AlN层的发射峰为310、460和590 nm，这可能是由氧杂质以及V _N (氮空位)和Al _i (铝间隙)引起的。

更新日期：2023-03-30

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