基于 Er3+/Yb3+Co 掺杂 CsPbCl3 薄膜的 1.54 µm 发光二极管的实现,Advanced Materials

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基于 Er3+/Yb3+Co 掺杂 CsPbCl3 薄膜的 1.54 µm 发光二极管的实现
Advanced Materials ( IF 27.4 ) Pub Date : 2023-03-29 , DOI: 10.1002/adma.202300118
Hongfei Li ₁ , Xiaoqi Liu ₂ , Donglei Zhou ₁ , Biao Dong ₁ , Lin Xu ₁ , Xue Bai ₁ , Hongwei Song ₁

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迫切需要具有优异光学性能和简单制造工艺的铒离子（Er ³⁺，1.54 µm）电泵浦光源来满足硅基集成光子学的发展。以往的Er基电致发光器件主要基于Er配合物或Er掺杂氧化物，其通常存在外量子效率（EQE）低或外加电压高等问题。在本工作中，一种新型的Er ³⁺ / Yb ³⁺共掺杂卤化铅钙钛矿薄膜（Er ³⁺ /Yb ³⁺ :CsPbCl ₃通过简单的两步溶液涂覆方法制备了最大光致发光量子产率为 30.12% 的发光二极管 (Er-PeLED)，并制造了相应的发光二极管 (Er-PeLED)，其表现出几乎纯的 1.54 µm 发射和峰值 EQE在 1.4 V 的低施加电压下可达 0.366%。强负热猝灭效应可能有助于 Er-PeLED 抑制焦耳热猝灭。^{这些优异的LED性能主要得益于醋酸盐对钙钛矿薄膜优异的调节性能、钙钛矿优异的半导体行为和强离子特性，以及Yb 3+}离子的参与，可以直接高效地将激子能量转移到Er ^{3 +}通过量子切割过程。总体而言，1.54 µm Er-PeLED 的实现为硅基集成光源提供了新的机遇。

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Realization of 1.54-µm Light-Emitting Diodes Based on Er3+/Yb3+Co-Doped CsPbCl3 Films

Erbium ions (Er³⁺, 1.54 µm) electric pumped light sources with excellent optical properties and a simple fabrication process are urgently desired to satisfy the development of silicon-based integration photonics. The previous Er-based electroluminescence devices are mainly based on Er-complexes or Er-doped oxide compounds, which usually suffer from low external quantum efficiency(EQE)or high applied voltage etc. In this work, a novel type of Er³⁺/Yb³⁺ co-doped lead-halide perovskite films (Er³⁺/Yb³⁺:CsPbCl₃) with the maximum photoluminescence quantum yield of 30.12% are prepared by a simple two-step solution-coating method and the corresponding light emitting diodes (Er-PeLEDs) are fabricated, which demonstrate an almost pure 1.54-µm emission and a peak EQE up to 0.366% at a low applied voltage of 1.4 V. Strong negative thermal quenching effect may help Er-PeLEDs suppress Joule heating quenching. These excellent LED properties benefit mainly from the outstanding regulatory performance of acetate to perovskite films, the excellent semiconductor behavior and strong ionic property of the perovskite, and the involvement of Yb³⁺ ions, which can directly and efficiently transfer the exciton energy to Er³⁺ through a quantum cutting process. Overall, the realization of 1.54-µm Er-PeLEDs offers new opportunities for silicon-based integrated light sources.

更新日期：2023-03-29

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