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Highly Sensitive Ultraviolet Photodetector Based on an AlGaN/GaN HEMT with Graphene-On-p-GaN Mesa Structure
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2023-03-28 , DOI: 10.1002/admi.202202379 Bhishma Pandit 1 , Hyeon‐Sik Jang 1 , Yunjo Jeong 2 , Sangmin An 3 , S. Chandramohan 1, 4 , Kyung Kyu Min 5 , Sang Min Won 6 , Chel‐Jong Choi 1 , Jaehee Cho 1 , Seongin Hong 7 , Keun Heo 1
Advanced Materials Interfaces ( IF 4.3 ) Pub Date : 2023-03-28 , DOI: 10.1002/admi.202202379 Bhishma Pandit 1 , Hyeon‐Sik Jang 1 , Yunjo Jeong 2 , Sangmin An 3 , S. Chandramohan 1, 4 , Kyung Kyu Min 5 , Sang Min Won 6 , Chel‐Jong Choi 1 , Jaehee Cho 1 , Seongin Hong 7 , Keun Heo 1
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The advantageous role of 2D electron gas presence at the AlGaN/GaN interface attracts huge interest in the field of GaN-based ultraviolet photodetector technology. However, the presence of high dark current deteriorates the photodetector performance by diminishing several figures of merit. In this work, enhanced figures of merit are demonstrated by employing interdigitated p-GaN finger structure on the top of the AlGaN/GaN heterostructure. The commonly present high dark current in p-GaN/AlGaN/GaN planar photodetector is largely reduced (from ≈µA to few pA) by etching the p-GaN, excluding the electrode region. Furthermore, by using a graphene transparent electrode along with the p-GaN interdigitated fingers on AlGaN/GaN heterostructure, ultraviolet photodetectors with superior sensitivity (3.55 × 106) and ultrahigh detectivity (1.91 × 1014 cm Hz1/2 W−1) are realized at 360 nm. A comparison of graphene/p-GaN and Ni/Au/p-GaN interdigitated fingers and planar p-GaN (with interdigitated graphene contacts) all on AlGaN/GaN heterostructure allows to understand the dominant roles of electrode transparency and the heterojunction structure. The simple and high electron mobility transistor-compatible fabrication process of UV detectors provides a unique application in the field of UV sensing technology.
中文翻译：
基于具有 Graphene-On-p-GaN 台面结构的 AlGaN/GaN HEMT 的高灵敏度紫外光电探测器
二维电子气存在于 AlGaN/GaN 界面的有利作用引起了基于 GaN 的紫外光电探测器技术领域的巨大兴趣。然而，高暗电流的存在会降低几个品质因数，从而降低光电探测器的性能。在这项工作中，通过在 AlGaN/GaN 异质结构的顶部采用叉指式 p-GaN 指状结构来证明增强的品质因数。通过蚀刻 p-GaN（不包括电极区域），p-GaN/AlGaN/GaN 平面光电探测器中普遍存在的高暗电流大大降低（从≈µA 到几 pA）。此外，通过在 AlGaN/GaN 异质结构上使用石墨烯透明电极和 p-GaN 叉指，具有优异灵敏度的紫外光电探测器（3.55 × 10 6) 和超高检测率 (1.91 × 10 14 cm Hz 1/2 W -1 ) 在 360 nm 处实现。比较 AlGaN/GaN 异质结构上的石墨烯/p-GaN 和 Ni/Au/p-GaN 叉指和平面 p-GaN（具有叉指石墨烯触点）可以理解电极透明度和异质结结构的主导作用。紫外检测器简单且与高电子迁移率晶体管兼容的制造工艺在紫外传感技术领域提供了独特的应用。
更新日期：2023-03-28
中文翻译：
基于具有 Graphene-On-p-GaN 台面结构的 AlGaN/GaN HEMT 的高灵敏度紫外光电探测器
二维电子气存在于 AlGaN/GaN 界面的有利作用引起了基于 GaN 的紫外光电探测器技术领域的巨大兴趣。然而，高暗电流的存在会降低几个品质因数，从而降低光电探测器的性能。在这项工作中，通过在 AlGaN/GaN 异质结构的顶部采用叉指式 p-GaN 指状结构来证明增强的品质因数。通过蚀刻 p-GaN（不包括电极区域），p-GaN/AlGaN/GaN 平面光电探测器中普遍存在的高暗电流大大降低（从≈µA 到几 pA）。此外，通过在 AlGaN/GaN 异质结构上使用石墨烯透明电极和 p-GaN 叉指，具有优异灵敏度的紫外光电探测器（3.55 × 10 6) 和超高检测率 (1.91 × 10 14 cm Hz 1/2 W -1 ) 在 360 nm 处实现。比较 AlGaN/GaN 异质结构上的石墨烯/p-GaN 和 Ni/Au/p-GaN 叉指和平面 p-GaN（具有叉指石墨烯触点）可以理解电极透明度和异质结结构的主导作用。紫外检测器简单且与高电子迁移率晶体管兼容的制造工艺在紫外传感技术领域提供了独特的应用。
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