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Regulation of oxygen vacancies in nitrogen-doped Ga2O3 films for high-performance MSM solar-blind UV photodetectors
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2023-03-25 , DOI: 10.1039/d3tc00345k Jinjin Wang 1 , Xueqiang Ji 1 , Song Qi 1 , Zhitong Li 1 , Zuyong Yan 2 , Mengcheng Li 1 , Xu Yan 1 , Aoxue Zhong 1 , Chao Lu 1 , Xiaohui Qi 1 , Peigang Li 1
Journal of Materials Chemistry C ( IF 5.7 ) Pub Date : 2023-03-25 , DOI: 10.1039/d3tc00345k Jinjin Wang 1 , Xueqiang Ji 1 , Song Qi 1 , Zhitong Li 1 , Zuyong Yan 2 , Mengcheng Li 1 , Xu Yan 1 , Aoxue Zhong 1 , Chao Lu 1 , Xiaohui Qi 1 , Peigang Li 1
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Gallium oxide (Ga2O3)-based solar-blind photodetectors (SBPDs) have shown promising applications. However, the concentration of native oxygen vacancies (VO) impacts the photoelectrical performance of Ga2O3 films. Herein, a nitrogen-doping method is proposed to decrease the concentration of VO in Ga2O3 films. Specifically, Ga2O3 thin films were grown by radio frequency magnetron sputtering using nitrogen-containing ceramic targets at different substrate temperatures ranging from room temperature to 800 °C. Furthermore, their structural, optical and electrical properties were systematically investigated. Since the concentration of VO in Ga2O3 films is largely lowered through introduction of nitrogen species at VO sites, the persistent photoconductivity effect is significantly restrained. As a result, N-doped Ga2O3 photodetectors exhibit large photo-to-dark current ratios (PDCRs) of 4.6 × 106, a high responsivity of 0.27 A W−1, a large external quantum efficiency of 132.5%, and a high specific detectivity of 6.6 × 1011 Jones at 900 μW cm−2 light intensities at 5 V. Moreover, the PDCRs and detectivity of a N-doped device are increased by 2.2 × 103 and 50.6 times, respectively, as compared to those of the undoped device. These results demonstrate that the regulation of VO by nitrogen-doping can effectively improve the photoelectric performance of the device, opening up new opportunities for fabricating high-performance SBPDs.
中文翻译：
用于高性能 MSM 日盲紫外光电探测器的氮掺杂 Ga2O3 薄膜中氧空位的调节
基于氧化镓 (Ga 2 O 3 ) 的日盲光电探测器 (SBPD) 已显示出广阔的应用前景。然而，天然氧空位(V O )的浓度影响Ga 2 O 3薄膜的光电性能。在此，提出了一种氮掺杂的方法来降低Ga 2 O 3薄膜中VO的浓度。具体而言，Ga 2 O 3在从室温到 800 °C 的不同衬底温度下，使用含氮陶瓷靶通过射频磁控管溅射生长薄膜。此外，系统地研究了它们的结构、光学和电学性质。由于在V O位点引入氮物质大大降低了Ga 2 O 3薄膜中V O的浓度，因此显着抑制了持久的光电导效应。因此，N 掺杂 Ga 2 O 3光电探测器表现出 4.6 × 10 6的大光暗电流比 (PDCR) ，以及 0.27 AW -1的高响应度, 132.5% 的大外量子效率和 6.6 × 10 11琼斯的高比探测率在 900 μW cm -2 5 V 光强下。此外，N 掺杂器件的 PDCR 和探测率增加了 2.2 ×与未掺杂器件相比，分别是10 3和 50.6 倍。这些结果表明，通过氮掺杂调节V O可以有效提高器件的光电性能，为制造高性能SBPDs开辟了新的机会。
更新日期：2023-03-25
中文翻译：
用于高性能 MSM 日盲紫外光电探测器的氮掺杂 Ga2O3 薄膜中氧空位的调节
基于氧化镓 (Ga 2 O 3 ) 的日盲光电探测器 (SBPD) 已显示出广阔的应用前景。然而，天然氧空位(V O )的浓度影响Ga 2 O 3薄膜的光电性能。在此，提出了一种氮掺杂的方法来降低Ga 2 O 3薄膜中VO的浓度。具体而言，Ga 2 O 3在从室温到 800 °C 的不同衬底温度下，使用含氮陶瓷靶通过射频磁控管溅射生长薄膜。此外，系统地研究了它们的结构、光学和电学性质。由于在V O位点引入氮物质大大降低了Ga 2 O 3薄膜中V O的浓度，因此显着抑制了持久的光电导效应。因此，N 掺杂 Ga 2 O 3光电探测器表现出 4.6 × 10 6的大光暗电流比 (PDCR) ，以及 0.27 AW -1的高响应度, 132.5% 的大外量子效率和 6.6 × 10 11琼斯的高比探测率在 900 μW cm -2 5 V 光强下。此外，N 掺杂器件的 PDCR 和探测率增加了 2.2 ×与未掺杂器件相比，分别是10 3和 50.6 倍。这些结果表明，通过氮掺杂调节V O可以有效提高器件的光电性能，为制造高性能SBPDs开辟了新的机会。
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