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I–III–VI Quantum Dots and Derivatives: Design, Synthesis, and Properties for Light-Emitting Diodes
Nano Letters ( IF 9.6 ) Pub Date : 2023-03-25 , DOI: 10.1021/acs.nanolett.2c03138
Linxiang Yang 1 , Shuai Zhang 1 , Bo Xu 1 , Jiangyuan Jiang 1 , Bo Cai 2 , Xinyi Lv 1 , Yousheng Zou 1 , Zhiyong Fan 3 , Heesun Yang 4 , Haibo Zeng 1
Affiliation  

Quantum dots (QDs) are important frontier luminescent materials for future technology in flexible ultrahigh-definition display, optical information internet, and bioimaging due to their outstanding luminescence efficiency and high color purity. I–III–VI QDs and derivatives demonstrate characteristics of composition-dependent band gap, full visible light coverage, high efficiency, excellent stability, and nontoxicity, and hence are expected to be ideal candidates for environmentally friendly materials replacing traditional Cd and Pb-based QDs. In particular, their compositional flexibility is highly conducive to precise control energy band structure and microstructure. Furthermore, the quantum dot light-emitting diodes (QLEDs) exhibits superior prospects in monochrome display and white illumination. This review summarizes the recent progress of I–III–VI QDs and their application in LEDs. First, the luminescence mechanism is illustrated based on their electronic-band structural characteristics. Second, focusing on the latest progress of I–III–VI QDs, the preparation mechanism, and the regulation of photophysical properties, the corresponding application progress particularly in light-emitting diodes is summarized as well. Finally, we provide perspectives on the overall current status and challenges propose performance improvement strategies in promoting the evolution of QDs and QLEDs, indicating the future directions in this field.

中文翻译:

I–III–VI 量子点和衍生物:发光二极管的设计、合成和特性

量子点(Quantum dots, QDs)以其出色的发光效率和高色纯度,成为未来柔性超高清显示、光信息互联网、生物成像等领域重要的前沿发光材料。I-III-VI量子点及其衍生物具有带隙依赖性、可见光全覆盖、高效率、稳定性好和无毒等特点,有望成为替代传统Cd和Pb基环保材料的理想候选材料量子点。特别是,它们的组成灵活性非常有利于精确控制能带结构和微观结构。此外,量子点发光二极管(QLED)在单色显示和白光照明方面表现出优越的前景。本综述总结了 I-III-VI 量子点的最新进展及其在 LED 中的应用。首先,基于它们的电子能带结构特征阐明了发光机制。其次,围绕I-III-VI量子点的最新进展、制备机理、光物理性质调控等,总结了相应的应用进展,特别是在发光二极管中的应用进展。最后,我们对总体现状和挑战提出了促进 QD 和 QLED 发展的性能改进策略,指明了该领域的未来方向。的制备机理、光物理性质的调控,以及相应的应用进展,特别是在发光二极管中的应用进展进行了综述。最后,我们对总体现状和挑战提出了促进 QD 和 QLED 发展的性能改进策略,指明了该领域的未来方向。的制备机理、光物理性质的调控,以及相应的应用进展,特别是在发光二极管中的应用进展进行了综述。最后,我们对总体现状和挑战提出了促进 QD 和 QLED 发展的性能改进策略,指明了该领域的未来方向。
更新日期:2023-03-25
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