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Ferroelectrically Modulated and Enhanced Photoresponse in a Self-Powered α-In2Se3/Si Heterojunction Photodetector
ACS Nano ( IF 15.8 ) Pub Date : 2023-03-23 , DOI: 10.1021/acsnano.2c11925 Cheng Jia 1, 2 , Shuangxiang Wu 1, 2 , Jinze Fan 1, 2 , Chaojie Luo 1, 2 , Minghui Fan 1, 3 , Ming Li 3 , Lanping He 4 , Yuanjun Yang 4 , Hui Zhang 1, 2, 5
ACS Nano ( IF 15.8 ) Pub Date : 2023-03-23 , DOI: 10.1021/acsnano.2c11925 Cheng Jia 1, 2 , Shuangxiang Wu 1, 2 , Jinze Fan 1, 2 , Chaojie Luo 1, 2 , Minghui Fan 1, 3 , Ming Li 3 , Lanping He 4 , Yuanjun Yang 4 , Hui Zhang 1, 2, 5
Affiliation
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Photodetectors have been applied to pivotal optoelectronic components of modern optical communication, sensing, and imaging systems. As a room-temperature ferroelectric van der Waals semiconductor, 2D α-In2Se3 is a promising candidate for a next-generation optoelectronic material because of its thickness-dependent direct bandgap and excellent optoelectronic performance. Previous studies of photodetectors based on α-In2Se3 have been rarely focused on the modulated relationship between the α-In2Se3 intrinsic ferroelectricity and photoresponsivity. Herein, a simple integrated process and high-performance photodetector based on an α-In2Se3/Si vertical hybrid-dimensional heterojunction was constructed. Our photodetector in the ferroelectric polarization up state accomplishes a self-powered, highly sensitive photoresponse with an on/off ratio of 4.5 × 105 and detectivity of 1.6 × 1013 Jones, and it also shows a fast response time with 43 μs. The depolarization field generated by the remanent polarization of ferroelectrics in α-In2Se3 provides a strategy for enhancement and modulation of photodetection. The negative correlation was discovered because the enhancement photoresponsivity factor of ferroelectric modulation competes with the photovoltaic behavior within the α-In2Se3/Si heterojunction. Our research highlights the great potential of the high-efficiency heterojunction photodetector for future object recognition and photoelectric imaging.
中文翻译：
自供电 α-In2Se3/Si 异质结光电探测器中的铁电调制和增强光响应
光电探测器已应用于现代光通信、传感和成像系统的关键光电元件。作为室温铁电范德瓦尔斯半导体，二维 α-In 2 Se 3因其厚度相关的直接带隙和优异的光电性能而成为下一代光电材料的有希望的候选者。以往对基于α-In 2 Se 3的光电探测器的研究很少关注α-In 2 Se 3本征铁电性和光响应性之间的调制关系。在此，基于α-In 2 Se 3的简单集成工艺和高性能光电探测器构建了/Si垂直杂维异质结。我们的光电探测器在铁电极化向上状态下实现了自供电、高灵敏度的光响应，开/关比为 4.5 × 10 5，检测率为 1.6 × 10 13琼斯，它还显示了 43 μs 的快速响应时间。α-In 2 Se 3中铁电体的剩余极化产生的去极化场提供了增强和调制光电探测的策略。发现负相关是因为铁电调制的增强光响应因子与 α-In 2 Se 3内的光伏行为竞争/Si异质结。我们的研究突出了高效异质结光电探测器在未来物体识别和光电成像方面的巨大潜力。
更新日期：2023-03-23
中文翻译：
自供电 α-In2Se3/Si 异质结光电探测器中的铁电调制和增强光响应
光电探测器已应用于现代光通信、传感和成像系统的关键光电元件。作为室温铁电范德瓦尔斯半导体，二维 α-In 2 Se 3因其厚度相关的直接带隙和优异的光电性能而成为下一代光电材料的有希望的候选者。以往对基于α-In 2 Se 3的光电探测器的研究很少关注α-In 2 Se 3本征铁电性和光响应性之间的调制关系。在此，基于α-In 2 Se 3的简单集成工艺和高性能光电探测器构建了/Si垂直杂维异质结。我们的光电探测器在铁电极化向上状态下实现了自供电、高灵敏度的光响应，开/关比为 4.5 × 10 5，检测率为 1.6 × 10 13琼斯，它还显示了 43 μs 的快速响应时间。α-In 2 Se 3中铁电体的剩余极化产生的去极化场提供了增强和调制光电探测的策略。发现负相关是因为铁电调制的增强光响应因子与 α-In 2 Se 3内的光伏行为竞争/Si异质结。我们的研究突出了高效异质结光电探测器在未来物体识别和光电成像方面的巨大潜力。
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