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Ferroelectric Orthorhombic ZrO2 Thin Films Achieved Through Nanosecond Laser Annealing
Advanced Science ( IF 14.3 ) Pub Date : 2023-03-22 , DOI: 10.1002/advs.202207390 Anna P S Crema 1, 2 , Marian C Istrate 3, 4 , Alexandre Silva 1, 2 , Veniero Lenzi 1, 2 , Leonardo Domingues 1, 2 , Megan O Hill 5 , Valentin S Teodorescu 3, 4 , Corneliu Ghica 4 , Maria J M Gomes 1, 2 , Mario Pereira 1, 2 , Luís Marques 1, 2 , Judith L MacManus-Driscoll 5 , José P B Silva 1, 2
Advanced Science ( IF 14.3 ) Pub Date : 2023-03-22 , DOI: 10.1002/advs.202207390 Anna P S Crema 1, 2 , Marian C Istrate 3, 4 , Alexandre Silva 1, 2 , Veniero Lenzi 1, 2 , Leonardo Domingues 1, 2 , Megan O Hill 5 , Valentin S Teodorescu 3, 4 , Corneliu Ghica 4 , Maria J M Gomes 1, 2 , Mario Pereira 1, 2 , Luís Marques 1, 2 , Judith L MacManus-Driscoll 5 , José P B Silva 1, 2
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A new approach for the stabilization of the ferroelectric orthorhombic ZrO2 films is demonstrated through nanosecond laser annealing (NLA) of as-deposited Si/SiOx/W(14 nm)/ZrO2(8 nm)/W(22 nm), grown by ion beam sputtering at low temperatures. The NLA process optimization is guided by COMSOL multiphysics simulations. The films annealed under the optimized conditions reveal the presence of the orthorhombic phase, as confirmed by X-ray diffraction, electron backscatter diffraction, and transmission electron microscopy. Macroscopic polarization-electric field hysteresis loops show ferroelectric behavior, with saturation polarization of 12.8 µC cm−2, remnant polarization of 12.7 µC cm−2 and coercive field of 1.2 MV cm−1. The films exhibit a wake-up effect that is attributed to the migration of point defects, such as oxygen vacancies, and/or a transition from nonferroelectric (monoclinic and tetragonal phase) to the ferroelectric orthorhombic phase. The capacitors demonstrate a stable polarization with an endurance of 6.0 × 105 cycles, demonstrating the potential of the NLA process for the fabrication of ferroelectric memory devices with high polarization, low coercive field, and high cycling stability.
中文翻译：
纳秒激光退火制备铁电正交ZrO2薄膜
通过对沉积态 Si/SiO x /W(14 nm)/ZrO 2 (8 nm)/W(22 nm)进行纳秒激光退火 (NLA)，证明了稳定铁电正交 ZrO 2薄膜的新方法，通过离子束溅射在低温下生长。NLA 过程优化由 COMSOL 多物理场仿真指导。在优化条件下退火的薄膜显示出正交晶相的存在，这通过 X 射线衍射、电子背散射衍射和透射电子显微镜得到证实。宏观极化-电场滞后回线表现出铁电行为，饱和极化为 12.8 µC cm -2，剩余极化为 12.7 µC cm -2和 1.2 MV cm -1的矫顽场。这些薄膜表现出唤醒效应，这归因于点缺陷的迁移，例如氧空位，和/或从非铁电（单斜晶和四方相）到铁电正交相的转变。这些电容器表现出稳定的极化，具有 6.0 × 10 5 个循环的耐久性，展示了 NLA 工艺在制造具有高极化、低矫顽场和高循环稳定性的铁电存储设备方面的潜力。
更新日期：2023-03-22
中文翻译：
纳秒激光退火制备铁电正交ZrO2薄膜
通过对沉积态 Si/SiO x /W(14 nm)/ZrO 2 (8 nm)/W(22 nm)进行纳秒激光退火 (NLA)，证明了稳定铁电正交 ZrO 2薄膜的新方法，通过离子束溅射在低温下生长。NLA 过程优化由 COMSOL 多物理场仿真指导。在优化条件下退火的薄膜显示出正交晶相的存在，这通过 X 射线衍射、电子背散射衍射和透射电子显微镜得到证实。宏观极化-电场滞后回线表现出铁电行为，饱和极化为 12.8 µC cm -2，剩余极化为 12.7 µC cm -2和 1.2 MV cm -1的矫顽场。这些薄膜表现出唤醒效应，这归因于点缺陷的迁移，例如氧空位，和/或从非铁电（单斜晶和四方相）到铁电正交相的转变。这些电容器表现出稳定的极化，具有 6.0 × 10 5 个循环的耐久性，展示了 NLA 工艺在制造具有高极化、低矫顽场和高循环稳定性的铁电存储设备方面的潜力。
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