掺入镝以稳定原子层沉积的 HfO2 薄膜,Chemistry of Materials

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掺入镝以稳定原子层沉积的 HfO2 薄膜
Chemistry of Materials ( IF 7.2 ) Pub Date : 2023-03-16 , DOI: 10.1021/acs.chemmater.2c02862
Yujin Lee _{1,

2} , Kangsik Kim ₃ , Zonghoon Lee _{3,

4} , Hong-Sub Lee ₅ , Han-Bo-Ram Lee ₆ , Woo-Hee Kim ₇ , Il-Kwon Oh _{1,

8} , Hyungjun Kim ₁

Affiliation

_{HfO 2}薄膜相对较低的热稳定性严重影响了半导体器件的性能。例如，HfO ₂的低结晶温度（~500 °C）会导致晶界的形成，从而增加漏电流。在这项研究中，Dy 掺入通过 HfO _{2薄膜的晶体稳定性导致 HfO}₂薄膜从各种方向平面到主 m(-111)平面的相变，增加了晶粒的尺寸。Dy掺杂的HfO ₂通过等离子体增强原子层沉积 (PE-ALD) 制备的具有调制掺杂含量的薄膜，通过结合电子显微镜和同步加速器 X 射线技术分析其化学成分来表征。通过 X 射线衍射观察到从 m(110)、m(−111)、m(111)、m(020) 和 m(120) 到主 m(−111) 平面的转变，这表明 Dy对HfO ₂薄膜的相稳定起着作用。_{使用电子显微镜获得的横截面和顶视图的原子尺度图像表明，与单一 HfO 2}薄膜相比，面内平均晶粒尺寸由于掺入 Dy 而增加了大约 4 倍。_{HfO 2}晶界面积的减少由于掺入Dy，HfO ₂的漏电流密度降低了1000倍，击穿强度增加。这一结果可以通过确定掺杂剂对主体薄膜材料晶体结构的影响来帮助未来的电子产品。

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Dysprosium Incorporation for Phase Stabilization of Atomic-Layer-Deposited HfO2 Thin Films

The relatively low thermal stability of HfO₂ films severely affects the performance of semiconductor devices. For instance, the low crystallization temperature of HfO₂ (∼500 °C) leads to the formation of grain boundaries, which increases the leakage current. In this study, Dy incorporation leads to the phase transformation of HfO₂ films from various directional planes to a main m(−111) plane by the crystallographic stabilization of HfO₂ films, increasing the size of grains. Dy-doped HfO₂ thin films with modulated doping content, prepared by plasma-enhanced atomic layer deposition (PE-ALD), are characterized by analysis of their chemical composition combined with electron microscopy and synchrotron X-ray techniques. The transformation from m(110), m(−111), m(111), m(020), and m(120) to a main m(−111) plane is observed through X-ray diffraction, which indicates that Dy plays a role for the phase stabilization of HfO₂ films. The atomic-scale images of the cross section and top view obtained using an electron microscope demonstrate that the in-plane average grain size is increased by approximately 4 times due to Dy incorporation compared with that of single HfO₂ films. The reduction in the area of the grain boundary of HfO₂ due to Dy incorporation decreases the leakage current density of HfO₂ by 1000 times and increased the breakdown strength. This result can aid future electronics by determining the effect of a dopant on the crystallographic structure of host thin-film materials.

更新日期：2023-03-16

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