Inspired by the increasing demand for energy-storage capacitors in electrical and electronic systems, dielectrics with high energy-storage performance have attracted more and more attention. AgNbO₃-based lead-free ceramics serve as one of the most promising environmental-friendly candidates. However, their energy storage optimization is seriously limited by the low breakdown strength. Fortunately, thin film as a form of AgNbO₃ materials can effectively improve the breakdown strength. In this work, AgNbO₃ film with ∼550 nm in thickness was deposited on SrRuO₃/(001)SrTiO₃ using pulsed laser deposition. The AgNbO₃ film reveals typical relaxor ferroelectric hysteresis loops due to the new nanopillar structure, which contributes to high breakdown strength of up to 1200 kV cm^–1. Benefiting from the high breakdown strength, a recoverable energy storage density of 10.3 J cm^–3 and an energy efficiency of 72.2% are obtained in the AgNbO₃ film, which demonstrates the promising prospect of AgNbO₃ film for energy storage applications.

受电气和电子系统对储能电容器日益增长的需求的启发，具有高储能性能的电介质受到越来越多的关注。AgNbO ₃基无铅陶瓷是最有前途的环保候选材料之一。然而，它们的储能优化受到低击穿强度的严重限制。_{幸运的是，AgNbO 3}薄膜材料可以有效提高击穿强度。在这项工作中，使用脉冲激光沉积将厚度约为 550 nm 的 AgNbO ₃薄膜沉积在 SrRuO ₃ /(001)SrTiO _3上。AgNbO ₃由于新的纳米柱结构，薄膜揭示了典型的弛豫铁电磁滞回线，这有助于高达 1200 kV cm ^–1的高击穿强度。得益于高击穿强度，AgNbO _{3薄膜的可恢复储能密度为10.3 J cm} ^{–3 ，能量效率为72.2%，展示了AgNbO} ₃薄膜在储能应用方面的广阔前景。