Effect of Ar Plasma Treatment on the Interface and Performance of CdZnTe Detectors,Crystal Research and Technology

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Effect of Ar Plasma Treatment on the Interface and Performance of CdZnTe Detectors
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2023-03-12 , DOI: 10.1002/crat.202200177
Xiangzhi Cao ₁ , Jijun Zhang ₁ , Shulei Wang ₁ , Zheren Xu ₁ , Linjun Wang ₁

Affiliation

The performance of CdZnTe detectors is not only influenced by the growth of crystal, but also by the quality of the interface layer between the crystal and the electrode. A model of CdZnTe detector with metal–semiconductor–metal structure is developed to investigate the effects of the interface on the space charge and electric field distribution. Atomic force microscopy, current–voltage (I–V) analysis, and energy spectra under ²⁴¹Am irradiation are adopted to investigate the effects of argon (Ar) plasma treatment on the interface and performance of CdZnTe detectors experimentally. The simulation results show that the interface layer with low density of surface state and thin thickness can form a more uniform space charge and electric field distribution. Due to the decrease of voltage drop across the interface, the leakage current at 200 V of CdZnTe detector with Ar plasma treatment is reduced from 159 to 44 nA cm⁻², and the full-width at half-maximum under ²⁴¹Am is improved from 9.3% to 8.2%, as compared to conventional Br-MeOH treatment.

中文翻译：

Ar 等离子体处理对 CdZnTe 探测器界面和性能的影响

CdZnTe 探测器的性能不仅受晶体生长的影响，还受晶体与电极之间界面层质量的影响。开发了具有金属-半导体-金属结构的 CdZnTe 探测器模型，以研究界面对空间电荷和电场分布的影响。原子力显微镜、电流-电压 ( I – V ) 分析和²⁴¹下的能谱采用Am辐照实验研究了氩（Ar）等离子体处理对CdZnTe探测器界面和性能的影响。仿真结果表明，界面态密度低、厚度薄的界面层可以形成更均匀的空间电荷和电场分布。由于界面压降的降低，经过 Ar 等离子体处理的 CdZnTe 探测器在 200 V 时的漏电流从 159 降低到 44 nA cm -2 ，并且在 241 Am 下的半^峰^全宽从9.3% 至 8.2%，与传统的 Br-MeOH 处理相比。

更新日期：2023-03-12

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