通过雾化学气相沉积使用 β-Fe2O3 缓冲层演示方铁锰矿结构的 δ-Ga2O3 薄膜,ACS Applied Electronic Materials

当前位置： X-MOL 学术 › ACS Appl. Electron. Mater. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

通过雾化学气相沉积使用 β-Fe2O3 缓冲层演示方铁锰矿结构的 δ-Ga2O3 薄膜
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2023-03-08 , DOI: 10.1021/acsaelm.2c01750
Takahiro Kato ₁ , Hiroyuki Nishinaka ₂ , Kazuki Shimazoe ₁ , Kazutaka Kanegae ₂ , Masahiro Yoshimoto ₂

Affiliation

氧化镓 (Ga ₂ O ₃ ) 具有五种晶型：α、β、γ、κ (ε) 和 δ。_{虽然前四种晶型已被充分研究，但关于δ-Ga 2} O ₃的报道却很少。在这里，我们展示了使用 β-Fe ₂ O ₃缓冲层通过雾化化学气相沉积外延生长亚稳态 δ-Ga ₂ O ₃薄膜。X 射线衍射 (XRD) 2θ–ω 扫描图显示 (004) κ-Ga ₂ O ₃在 (111) 氧化钇稳定氧化锆 (YSZ) 上生长，无缓冲层或有 bcc-In ₂ O ₃缓冲层, 而 (222) δ-Ga ₂ O₃在(222) β-Fe ₂ O ₃上生长。β-Fe ₂ O ₃缓冲层导致了δ-Ga ₂ O ₃薄膜的外延生长。_{β-Fe 2} O ₃和δ-Ga ₂ O ₃的等效晶体结构之间的晶格失配触发了这种生长。XRD分析表明δ-Ga ₂ O ₃在β-Fe ₂ O _{3表面外延生长}面外和面内方向的缓冲层/YSZ 基板，从衍射峰推断的晶格常数估计为 9.255 Å。倒易空间映射结果表明生长在β-Fe ₂ O ₃上的δ-Ga ₂ O ₃完全弛豫。选区电子衍射图像证实δ-Ga ₂ O ₃具有立方方铁锰矿结构。_{根据反射电子能量损失谱计算，δ-Ga 2} O ₃的光学带隙为4.3或4.9eV。首次成功生长出δ-Ga ₂ O _{3外延薄膜。}

"点击查看英文标题和摘要"

Demonstration of Bixbyite-Structured δ-Ga2O3 Thin Films Using β-Fe2O3 Buffer Layers by Mist Chemical Vapor Deposition

Gallium oxide (Ga₂O₃) possesses five polymorphs: α, β, γ, κ (ε), and δ. Although the first four polymorphs have been well-studied, there are few reports on δ-Ga₂O₃. Here, we demonstrate the epitaxial growth of metastable δ-Ga₂O₃ thin films by mist chemical vapor deposition using β-Fe₂O₃ buffer layers. X-ray diffraction (XRD) 2θ–ω scan pattern revealed that (004) κ-Ga₂O₃ grew on (111) yttria-stabilized zirconia (YSZ) without a buffer layer or with a bcc-In₂O₃ buffer layer, whereas (222) δ-Ga₂O₃ grew on (222) β-Fe₂O₃. The β-Fe₂O₃ buffer layer led to the epitaxial growth of the δ-Ga₂O₃ thin film. The lattice mismatch between the equivalent crystal structures of β-Fe₂O₃ and δ-Ga₂O₃ triggered this growth. XRD analysis shows that δ-Ga₂O₃ grew epitaxially on the β-Fe₂O₃ buffer layer/YSZ substrate in both the out-of-plane and in-plane orientations, and the lattice constant inferred from the diffraction peaks was estimated to be 9.255 Å. Reciprocal space mapping results indicated that the δ-Ga₂O₃ grown on β-Fe₂O₃ was fully relaxed. Selected area electron diffraction images confirmed that the δ-Ga₂O₃ exhibited a cubic bixbyite structure. The optical band gap of δ-Ga₂O₃ was 4.3 or 4.9 eV, as calculated from reflection electron energy loss spectroscopy. We successfully grew a δ-Ga₂O₃ epitaxial thin film for the first time.

更新日期：2023-03-08

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南