We report Chern insulating phases emerging from a single layer of layered chalcogenide CrSiTe₃, a transition metal trichacogenides (TMTC) material, in the presence of charge doping. Due to strong hybridization with Te p orbitals, the spin-orbit coupling effect opens a finite band gap, leading to a nontrivial topology of the Cr e_g conduction band manifold with higher Chern numbers. Our calculations show that quantum anomalous Hall effects can be realized by adding one electron in a formula unit cell of Cr₂Si₂Te₆, equivalent to electron doping by 2.36 × 10¹⁴ cm⁻² carrier density. Furthermore, the doping-induced anomalous Hall conductivity can be controlled by an external magnetic field via spin-orientation-dependent tuning of the spin-orbit coupling. In addition, we find distinct quantum anomalous Hall phases employing tight-binding model analysis, suggesting that CrSiTe₃ can be a fascinating platform to realize Chern insulating systems with higher Chern numbers.