Synthesis of Two-Dimensional MoO2 Nanoplates with Large Linear Magnetoresistance and Nonlinear Hall Effect,Nano Letters

当前位置： X-MOL 学术 › Nano Lett. › 论文详情

Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)

Synthesis of Two-Dimensional MoO2 Nanoplates with Large Linear Magnetoresistance and Nonlinear Hall Effect
Nano Letters ( IF 9.6 ) Pub Date : 2023-03-02 , DOI: 10.1021/acs.nanolett.2c04721
Hongmei Zhang _{1,

2} , Yangwu Wu _{1,

2} , Ziwei Huang _{1,

2} , Xiaohua Shen _{1,

2} , Bailing Li _{1,

2} , Zucheng Zhang _{1,

2} , Ruixia Wu _{1,

2} , Di Wang _{1,

2} , Chen Yi _{1,

2} , Kun He _{1,

2} , Yucheng Zhou _{1,

2} , Jialing Liu _{1,

2} , Bo Li _{1,

2} , Xidong Duan _{1,

2}

Affiliation

Two-dimensional (2D) materials with large linear magnetoresistance (LMR) are very interesting owing to their potential application in magnetic storage or sensor devices. Here, we report the synthesis of 2D MoO₂ nanoplates grown by a chemical vapor deposition (CVD) method and observe large LMR and nonlinear Hall behavior in MoO₂ nanoplates. As-obtained MoO₂ nanoplates exhibit rhombic shapes and high crystallinity. Electrical studies indicate that MoO₂ nanoplates feature a metallic nature with an excellent conductivity of up to 3.7 × 10⁷ S m^–1 at 2.5 K. MoO₂ nanoplates display a large LMR of up to 455% at 3 K and −9 T. A thickness-dependent LMR analysis suggests that LMR values increase upon increasing the thickness of nanoplates. Besides, nonlinearity has been found in the magnetic-field-dependent Hall resistance, which decreases with increasing temperatures. Our studies highlight that MoO₂ nanoplates are promising materials for fundamental studies and potential applications in magnetic storage devices.

中文翻译：

具有大线性磁阻和非线性霍尔效应的二维MoO2纳米片的合成

具有大线性磁阻 (LMR) 的二维 (2D) 材料因其在磁存储或传感器设备中的潜在应用而备受关注。在这里，我们报告了通过化学气相沉积 (CVD) 方法生长的2D MoO ₂纳米板的合成，并观察了 MoO ₂纳米板中的大 LMR 和非线性霍尔行为。所获得的 MoO ₂纳米片呈现菱形形状和高结晶度。电气研究表明，MoO ₂纳米板具有金属特性，在 2.5 K 时具有高达 3.7 × 10 ⁷ S m ^{–1的出色导电率。MoO}₂纳米板在 3 K 和 −9 T 时显示高达 455% 的大 LMR。厚度相关的 LMR 分析表明，随着纳米板厚度的增加，LMR 值会增加。此外，在与磁场相关的霍尔电阻中发现了非线性，它会随着温度的升高而降低。我们的研究强调，MoO ₂纳米板是用于基础研究和磁存储设备潜在应用的有前途的材料。

更新日期：2023-03-02

点击分享查看原文

点击收藏

阅读更多本刊新发论文本刊介绍/投稿指南